NJVMJD122T4G

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Mfr.Part #
NJVMJD122T4G
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS NPN DARL 100V 8A DPAK
Stock
23,664
In Stock :
23,664

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Operating Temperature :
-65°C~150°C TJ
Emitter Base Voltage (VEBO) :
5V
Terminal Finish :
Tin (Sn)
Radiation Hardening :
No
Number of Elements :
1
Transistor Element Material :
SILICON
Max Power Dissipation :
1.75W
Transistor Application :
AMPLIFIER
Collector Base Voltage (VCBO) :
100V
Max Collector Current :
8A
Power - Max :
1.75W
Case Connection :
COLLECTOR
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Series :
Automotive, AEC-Q101
JESD-609 Code :
e3
Collector Emitter Voltage (VCEO) :
100V
Pbfree Code :
yes
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Height :
2.38mm
Number of Pins :
3
Width :
6.22mm
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Factory Lead Time :
8 Weeks
Vce Saturation (Max) @ Ib, Ic :
4V @ 80mA, 8A
Surface Mount :
yes
Transition Frequency :
4MHz
RoHS Status :
ROHS3 Compliant
Frequency - Transition :
4MHz
Collector Emitter Saturation Voltage :
2V
Packaging :
Tape and Reel (TR)
Terminal Form :
Gull wing
Lead Free :
Lead Free
Max Breakdown Voltage :
100V
Published :
2008
Current - Collector Cutoff (Max) :
10μA
Halogen Free :
Halogen Free
JESD-30 Code :
R-PSSO-G2
Transistor Type :
NPN - Darlington
Collector Emitter Breakdown Voltage :
100V
Length :
6.73mm
Polarity :
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 4A 4V
Pin Count :
3
Mounting Type :
Surface Mount
Number of Terminations :
2
Datasheets
NJVMJD122T4G
Introducing Transistors - Bipolar (BJT) - Single onsemi NJVMJD122T4G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~150°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Pins:3, Mounting Type:Surface Mount, Number of Terminations:2, NJVMJD122T4G pinout, NJVMJD122T4G datasheet PDF, NJVMJD122T4G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NJVMJD122T4G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NJVMJD122T4G


NPN - Darlington -65°C~150°C TJ 10μA 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

NJVMJD122T4G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 4A 4V DC current gain.As it features a collector emitter saturation voltage of 2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 4MHz in the part.Single BJT transistor can be broken down at a voltage of 100V volts.When collector current reaches its maximum, it can reach 8A volts.

NJVMJD122T4G Features


the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 80mA, 8A
the emitter base voltage is kept at 5V
a transition frequency of 4MHz


NJVMJD122T4G Applications


There are a lot of ON Semiconductor
NJVMJD122T4G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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