NJVMJD122T4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Base Voltage (VCBO) :

100V

Number of Elements :

1

Pin Count :

3

Number of Pins :

3

Transistor Application :

AMPLIFIER

Radiation Hardening :

No

Published :

2008

Collector Emitter Breakdown Voltage :

100V

Transistor Type :

NPN - Darlington

Halogen Free :

Halogen Free

Max Power Dissipation :

1.75W

Collector Emitter Voltage (VCEO) :

100V

Height :

2.38mm

Collector Emitter Saturation Voltage :

2V

Transistor Element Material :

SILICON

Series :

Automotive, AEC-Q101

Factory Lead Time :

8 Weeks

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Max Collector Current :

8A

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 4A 4V

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

6.22mm

Emitter Base Voltage (VEBO) :

5V

JESD-30 Code :

R-PSSO-G2

Vce Saturation (Max) @ Ib, Ic :

4V @ 80mA, 8A

Element Configuration :

Single

Number of Terminations :

2

Length :

6.73mm

Mounting Type :

Surface Mount

Max Breakdown Voltage :

100V

Lead Free :

Lead Free

Transition Frequency :

4MHz

Pbfree Code :

yes

Operating Temperature :

-65°C~150°C TJ

Surface Mount :

yes

Case Connection :

COLLECTOR

JESD-609 Code :

e3

Polarity :

NPN

Power - Max :

1.75W

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current - Collector Cutoff (Max) :

10μA

Frequency - Transition :

4MHz