NJVMJD122T4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Operating Temperature :

-65°C~150°C TJ

Emitter Base Voltage (VEBO) :

5V

Terminal Finish :

Tin (Sn)

Radiation Hardening :

No

Number of Elements :

1

Transistor Element Material :

SILICON

Max Power Dissipation :

1.75W

Transistor Application :

AMPLIFIER

Collector Base Voltage (VCBO) :

100V

Max Collector Current :

8A

Power - Max :

1.75W

Case Connection :

COLLECTOR

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Series :

Automotive, AEC-Q101

JESD-609 Code :

e3

Collector Emitter Voltage (VCEO) :

100V

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Height :

2.38mm

Number of Pins :

3

Width :

6.22mm

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Factory Lead Time :

8 Weeks

Vce Saturation (Max) @ Ib, Ic :

4V @ 80mA, 8A

Surface Mount :

yes

Transition Frequency :

4MHz

RoHS Status :

ROHS3 Compliant

Frequency - Transition :

4MHz

Collector Emitter Saturation Voltage :

2V

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Lead Free :

Lead Free

Max Breakdown Voltage :

100V

Published :

2008

Current - Collector Cutoff (Max) :

10μA

Halogen Free :

Halogen Free

JESD-30 Code :

R-PSSO-G2

Transistor Type :

NPN - Darlington

Collector Emitter Breakdown Voltage :

100V

Length :

6.73mm

Polarity :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 4A 4V

Pin Count :

3

Mounting Type :

Surface Mount

Number of Terminations :

2