NJVMJD44H11RLG
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- Mfr.Part #
- NJVMJD44H11RLG
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 80V 8A DPAK
- Stock
- 1,606
- In Stock ：
- 1,606
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-30 Code :
- R-PSSO-G2
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- NPN
- Frequency :
- 85MHz
- Power Dissipation :
- 1.75W
- Number of Elements :
- 1
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 85MHz
- Transition Frequency :
- 85MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 2A 1V
- Pbfree Code :
- yes
- Series :
- Automotive, AEC-Q101
- Transistor Element Material :
- SILICON
- Continuous Collector Current :
- 8A
- JESD-609 Code :
- e3
- hFE Min :
- 60
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 8A
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 3
- Case Connection :
- COLLECTOR
- Collector Emitter Voltage (VCEO) :
- 80V
- Collector Emitter Saturation Voltage :
- 1V
- Current - Collector Cutoff (Max) :
- 1μA
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 1.75W
- ECCN Code :
- EAR99
- Halogen Free :
- Halogen Free
- Published :
- 2008
- Number of Terminations :
- 2
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Breakdown Voltage :
- 80V
- Lifecycle Status :
- ACTIVE (Last Updated: 17 hours ago)
- Surface Mount :
- yes
- Terminal Form :
- Gull wing
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Type :
- NPN
- Datasheets
- NJVMJD44H11RLG
NPN -55°C~150°C TJ 1μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
NJVMJD44H11RLG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 60 @ 2A 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 400mA, 8A.Single BJT transistor is recommended to keep the continuous collector voltage at 8A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 85MHz.Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.
NJVMJD44H11RLG Features
the DC current gain for this device is 60 @ 2A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
a transition frequency of 85MHz
NJVMJD44H11RLG Applications
There are a lot of ON Semiconductor
NJVMJD44H11RLG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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