NJVMJD44H11G

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Mfr.Part #
NJVMJD44H11G
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS NPN 80V 8A DPAK
Stock
1
In Stock :
1

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
JESD-609 Code :
e3
Packaging :
Tube
Number of Elements :
1
Terminal Form :
Gull wing
Polarity/Channel Type :
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 4A 1V
Pin Count :
3
Pbfree Code :
yes
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
ECCN Code :
EAR99
Factory Lead Time :
8 Weeks
Radiation Hardening :
No
Emitter Base Voltage (VEBO) :
5V
RoHS Status :
ROHS3 Compliant
Published :
2006
Surface Mount :
yes
Transition Frequency :
85MHz
Halogen Free :
Halogen Free
Collector Emitter Saturation Voltage :
1V
Number of Terminations :
2
Transistor Type :
NPN
JESD-30 Code :
R-PSSO-G2
Number of Pins :
3
Base Part Number :
MJD44H11
Lead Free :
Lead Free
Max Collector Current :
8A
Max Power Dissipation :
1.75W
Terminal Finish :
Tin (Sn)
Current - Collector Cutoff (Max) :
1μA
Frequency :
85MHz
Mounting Type :
Surface Mount
Collector Emitter Breakdown Voltage :
80V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Voltage (VCEO) :
80V
Transistor Application :
SWITCHING
Vce Saturation (Max) @ Ib, Ic :
1V @ 400mA, 8A
Operating Temperature :
-55°C~150°C TJ
Continuous Collector Current :
8A
Transistor Element Material :
SILICON
Case Connection :
COLLECTOR
Gain Bandwidth Product :
85MHz
Power Dissipation :
1.75W
Element Configuration :
Single
Datasheets
NJVMJD44H11G
Introducing Transistors - Bipolar (BJT) - Single onsemi NJVMJD44H11G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Number of Pins:3, Base Part Number:MJD44H11, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~150°C TJ, NJVMJD44H11G pinout, NJVMJD44H11G datasheet PDF, NJVMJD44H11G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NJVMJD44H11G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NJVMJD44H11G


NPN -55°C~150°C TJ 1μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tube Surface Mount

NJVMJD44H11G Overview


This device has a DC current gain of 40 @ 4A 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 8A is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.In this part, there is a transition frequency of 85MHz.The maximum collector current is 8A volts.

NJVMJD44H11G Features


the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
a transition frequency of 85MHz


NJVMJD44H11G Applications


There are a lot of ON Semiconductor
NJVMJD44H11G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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