NJVMJD44H11G
- Mfr.Part #
- NJVMJD44H11G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 80V 8A DPAK
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Packaging :
- Tube
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Pin Count :
- 3
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- ECCN Code :
- EAR99
- Factory Lead Time :
- 8 Weeks
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2006
- Surface Mount :
- yes
- Transition Frequency :
- 85MHz
- Halogen Free :
- Halogen Free
- Collector Emitter Saturation Voltage :
- 1V
- Number of Terminations :
- 2
- Transistor Type :
- NPN
- JESD-30 Code :
- R-PSSO-G2
- Number of Pins :
- 3
- Base Part Number :
- MJD44H11
- Lead Free :
- Lead Free
- Max Collector Current :
- 8A
- Max Power Dissipation :
- 1.75W
- Terminal Finish :
- Tin (Sn)
- Current - Collector Cutoff (Max) :
- 1μA
- Frequency :
- 85MHz
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 80V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 80V
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Collector Current :
- 8A
- Transistor Element Material :
- SILICON
- Case Connection :
- COLLECTOR
- Gain Bandwidth Product :
- 85MHz
- Power Dissipation :
- 1.75W
- Element Configuration :
- Single
- Datasheets
- NJVMJD44H11G

NPN -55°C~150°C TJ 1μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tube Surface Mount
NJVMJD44H11G Overview
This device has a DC current gain of 40 @ 4A 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 8A is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.In this part, there is a transition frequency of 85MHz.The maximum collector current is 8A volts.
NJVMJD44H11G Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
a transition frequency of 85MHz
NJVMJD44H11G Applications
There are a lot of ON Semiconductor
NJVMJD44H11G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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