NJVMJD350T4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Factory Lead Time :

8 Weeks

Case Connection :

COLLECTOR

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Published :

2006

JESD-609 Code :

e3

hFE Min :

30

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

300V

Max Collector Current :

500mA

Gain Bandwidth Product :

10MHz

Transition Frequency :

10MHz

Terminal Position :

Single

Reference Standard :

AEC-Q101

Mounting Type :

Surface Mount

Operating Temperature :

-65°C~150°C TJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current - Collector Cutoff (Max) :

100μA

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 50mA 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

ECCN Code :

EAR99

Emitter Base Voltage (VEBO) :

3V

Pbfree Code :

yes

Current - Collector (Ic) (Max) :

500mA

Max Power Dissipation :

1.56W

Collector Base Voltage (VCBO) :

300V

Collector Emitter Voltage (VCEO) :

300V

Radiation Hardening :

No

Polarity/Channel Type :

PNP

Number of Elements :

1

Vce Saturation (Max) @ Ib, Ic :

1V @ 10mA, 100mA

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Lead Free :

Lead Free

Surface Mount :

yes

Configuration :

Single

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Base Part Number :

MJD350

Pin Count :

3

Collector Emitter Saturation Voltage :

1V

Transistor Type :

PNP