NJVMJD32CT4G
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- Mfr.Part #
- NJVMJD32CT4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 100V 3A DPAK
- Stock
- 10,743
- In Stock ：
- 10,743
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 17 hours ago)
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 3MHz
- Power Dissipation :
- 15W
- Collector Base Voltage (VCBO) :
- 100V
- Current - Collector Cutoff (Max) :
- 50μA
- Transistor Type :
- PNP
- Operating Temperature :
- -65°C~150°C TJ
- Published :
- 2005
- RoHS Status :
- ROHS3 Compliant
- Series :
- Automotive, AEC-Q101
- Collector Emitter Saturation Voltage :
- 1.2V
- Number of Pins :
- 3
- Height :
- 2.38mm
- Surface Mount :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Length :
- 6.73mm
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 100V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Element Configuration :
- Single
- Factory Lead Time :
- 8 Weeks
- Lead Free :
- Lead Free
- Frequency :
- 3MHz
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1A 4V
- Max Collector Current :
- 3A
- Transition Frequency :
- 3MHz
- Packaging :
- Tape and Reel (TR)
- Continuous Collector Current :
- 3A
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 100V
- Polarity/Channel Type :
- PNP
- ECCN Code :
- EAR99
- Width :
- 6.22mm
- Max Breakdown Voltage :
- 100V
- hFE Min :
- 25
- Max Power Dissipation :
- 1.56W
- Datasheets
- NJVMJD32CT4G
PNP -65°C~150°C TJ 50μA 1 Elements PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
NJVMJD32CT4G Overview
This device has a DC current gain of 25 @ 1A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.2V.A VCE saturation (Max) of 1.2V @ 375mA, 3A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 3A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 3MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 3A volts is possible.
NJVMJD32CT4G Features
the DC current gain for this device is 25 @ 1A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz
NJVMJD32CT4G Applications
There are a lot of ON Semiconductor
NJVMJD32CT4G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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