NJVMJD32CT4G
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- Mfr.Part #
- NJVMJD32CT4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 100V 3A DPAK
- Stock
- 10,743
- In Stock ：
- 10,743
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 100V
- Width :
- 6.22mm
- Power Dissipation :
- 15W
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 3MHz
- Max Breakdown Voltage :
- 100V
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Factory Lead Time :
- 8 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP
- Series :
- Automotive, AEC-Q101
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -65°C~150°C TJ
- Height :
- 2.38mm
- Polarity/Channel Type :
- PNP
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 100V
- Continuous Collector Current :
- 3A
- Collector Emitter Voltage (VCEO) :
- 100V
- Current - Collector Cutoff (Max) :
- 50μA
- Length :
- 6.73mm
- Collector Emitter Saturation Voltage :
- 1.2V
- Frequency :
- 3MHz
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- hFE Min :
- 25
- Published :
- 2005
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 3MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 17 hours ago)
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Max Collector Current :
- 3A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1A 4V
- Max Power Dissipation :
- 1.56W
- Surface Mount :
- yes
- Datasheets
- NJVMJD32CT4G
PNP -65°C~150°C TJ 50μA 1 Elements PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
NJVMJD32CT4G Overview
This device has a DC current gain of 25 @ 1A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.2V.A VCE saturation (Max) of 1.2V @ 375mA, 3A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 3A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 3MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 3A volts is possible.
NJVMJD32CT4G Features
the DC current gain for this device is 25 @ 1A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz
NJVMJD32CT4G Applications
There are a lot of ON Semiconductor
NJVMJD32CT4G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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