NJVMJD31T4G
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- Mfr.Part #
- NJVMJD31T4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 40V 3A DPAK
- Stock
- 1,875
- In Stock ：
- 1,875
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -65°C~150°C TJ
- Transition Frequency :
- 3MHz
- Weight :
- 260.39037mg
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Max Collector Current :
- 3A
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 40V
- Configuration :
- Single
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 3MHz
- Lead Free :
- Lead Free
- Surface Mount :
- yes
- Continuous Collector Current :
- 3A
- Frequency :
- 3MHz
- Factory Lead Time :
- 8 Weeks
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 50μA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 3A 4V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Collector Emitter Breakdown Voltage :
- 40V
- Collector Base Voltage (VCBO) :
- 40V
- Max Power Dissipation :
- 1.56W
- Collector Emitter Saturation Voltage :
- 1.2V
- Power Dissipation :
- 1.56W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- hFE Min :
- 10
- Published :
- 2010
- Terminal Finish :
- Tin (Sn)
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- NJVMJD31T4G
NPN -65°C~150°C TJ 50μA 1 Elements NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
NJVMJD31T4G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.2V @ 375mA, 3A.Continuous collector voltages of 3A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 3MHz.During maximum operation, collector current can be as low as 3A volts.
NJVMJD31T4G Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz
NJVMJD31T4G Applications
There are a lot of ON Semiconductor
NJVMJD31T4G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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