NJVMJD31CT4G
- Mfr.Part #
- NJVMJD31CT4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A DPAK
- Stock
- 5,000
- In Stock :
- 5,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 40V
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 100V
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Reach Compliance Code :
- not_compliant
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 375mA, 3A
- Published :
- 2005
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 1.56W
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Max Power Dissipation :
- 15W
- Frequency :
- 3MHz
- Configuration :
- Single
- Transition Frequency :
- 3MHz
- Series :
- Automotive, AEC-Q101
- hFE Min :
- 10
- Surface Mount :
- yes
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 100V
- Contact Plating :
- Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1A 4V
- Pin Count :
- 3
- Max Breakdown Voltage :
- 100V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Pbfree Code :
- yes
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 8 Weeks
- Operating Temperature :
- -65°C~150°C TJ
- Max Collector Current :
- 3A
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 50μA
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- NJVMJD31CT4G

NPN -65°C~150°C TJ 50μA 1 Elements NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
NJVMJD31CT4G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 25 @ 1A 4V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.2V @ 375mA, 3A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 3MHz is present in the part.There is a breakdown input voltage of 100V volts that it can take.Collector current can be as low as 3A volts at its maximum.
NJVMJD31CT4G Features
the DC current gain for this device is 25 @ 1A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz
NJVMJD31CT4G Applications
There are a lot of ON Semiconductor
NJVMJD31CT4G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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