NJVMJD31CT4G

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Mfr.Part #
NJVMJD31CT4G
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS NPN 100V 3A DPAK
Stock
5,000
In Stock :
5,000

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Voltage (VCEO) :
40V
Number of Pins :
3
Collector Emitter Breakdown Voltage :
100V
ECCN Code :
EAR99
Lead Free :
Lead Free
Transistor Type :
NPN
REACH SVHC :
No SVHC
JESD-609 Code :
e3
Reach Compliance Code :
not_compliant
Vce Saturation (Max) @ Ib, Ic :
1.2V @ 375mA, 3A
Published :
2005
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation :
1.56W
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Max Power Dissipation :
15W
Frequency :
3MHz
Configuration :
Single
Transition Frequency :
3MHz
Series :
Automotive, AEC-Q101
hFE Min :
10
Surface Mount :
yes
Packaging :
Tape and Reel (TR)
Collector Base Voltage (VCBO) :
100V
Contact Plating :
Tin
DC Current Gain (hFE) (Min) @ Ic, Vce :
25 @ 1A 4V
Pin Count :
3
Max Breakdown Voltage :
100V
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Pbfree Code :
yes
Polarity/Channel Type :
NPN
Mounting Type :
Surface Mount
Factory Lead Time :
8 Weeks
Operating Temperature :
-65°C~150°C TJ
Max Collector Current :
3A
Emitter Base Voltage (VEBO) :
5V
RoHS Status :
ROHS3 Compliant
Current - Collector Cutoff (Max) :
50μA
Number of Elements :
1
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Datasheets
NJVMJD31CT4G
Introducing Transistors - Bipolar (BJT) - Single onsemi NJVMJD31CT4G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, Operating Temperature:-65°C~150°C TJ, NJVMJD31CT4G pinout, NJVMJD31CT4G datasheet PDF, NJVMJD31CT4G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NJVMJD31CT4G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NJVMJD31CT4G


NPN -65°C~150°C TJ 50μA 1 Elements NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

NJVMJD31CT4G Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 25 @ 1A 4V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.2V @ 375mA, 3A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 3MHz is present in the part.There is a breakdown input voltage of 100V volts that it can take.Collector current can be as low as 3A volts at its maximum.

NJVMJD31CT4G Features


the DC current gain for this device is 25 @ 1A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz


NJVMJD31CT4G Applications


There are a lot of ON Semiconductor
NJVMJD31CT4G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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