NJVMJD243T4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Type :

NPN

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Collector Emitter Breakdown Voltage :

100V

Pin Count :

3

Pbfree Code :

yes

JESD-30 Code :

R-PSSO-G2

Power - Max :

1.4W

Configuration :

Single

Mounting Type :

Surface Mount

Operating Temperature :

-65°C~150°C TJ

Max Power Dissipation :

1.4W

Collector Emitter Voltage (VCEO) :

600mV

Base Part Number :

MJD243

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Terminal Position :

Single

Radiation Hardening :

No

Terminal Finish :

Tin (Sn)

Vce Saturation (Max) @ Ib, Ic :

600mV @ 100mA, 1A

Factory Lead Time :

8 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 200mA 1V

JESD-609 Code :

e3

Collector Base Voltage (VCBO) :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

100nA ICBO

Number of Terminations :

2

Lead Free :

Lead Free

Transition Frequency :

40MHz

ECCN Code :

EAR99

Surface Mount :

yes

Terminal Form :

Gull wing

Reference Standard :

AEC-Q101

RoHS Status :

ROHS3 Compliant

Halogen Free :

Halogen Free

Case Connection :

COLLECTOR

Polarity/Channel Type :

NPN

Frequency - Transition :

40MHz

Transistor Element Material :

SILICON

Transistor Application :

AMPLIFIER

Max Collector Current :

4A

Published :

2007

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Elements :

1