NDS356P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-236-3, SC-59, SOT-23-3

Pbfree Code :

yes

Terminal Finish :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 10V

Rds On (Max) @ Id, Vgs :

210m Ω @ 1.3A, 10V

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 5V

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

1.1A Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Transistor Application :

SWITCHING

Power Dissipation-Max :

500mW Ta

DS Breakdown Voltage-Min :

20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Additional Feature :

LOGIC LEVEL COMPATIBLE

Vgs (Max) :

±12V

Drain to Source Voltage (Vdss) :

20V

Pin Count :

3

Drain-source On Resistance-Max :

0.21Ohm

Number of Elements :

1

JESD-30 Code :

R-PDSO-G3

Qualification Status :

COMMERCIAL

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

1.1A

FET Type :

P-Channel

Terminal Form :

Gull wing

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)