NDS332P

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Mfr.Part #
NDS332P
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET P-CH 20V 1A SUPERSOT3
Stock
22,816
In Stock :
22,816

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
1A Ta
Drain Current-Max (Abs) (ID) :
1A
Number of Elements :
1
Width :
3.05mm
Vgs (Max) :
±8V
Qualification Status :
Not Qualified
Rds On (Max) @ Id, Vgs :
300m Ω @ 1.1A, 4.5V
Current Rating :
-1A
Additional Feature :
LOGIC LEVEL COMPATIBLE, ESD RATED
Drain to Source Breakdown Voltage :
-20V
Operating Temperature :
-55°C~150°C TJ
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Surface Mount :
yes
Number of Terminations :
3
Operating Mode :
ENHANCEMENT MODE
Published :
2017
Number of Pins :
3
HTS Code :
8541.21.00.95
Package / Case :
TO-236-3, SC-59, SOT-23-3
Power Dissipation-Max :
500mW Ta
Pbfree Code :
yes
Gate Charge (Qg) (Max) @ Vgs :
5nC @ 4.5V
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Surface Mount
Terminal Finish :
Tin (Sn)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
FET Type :
P-Channel
Lead Free :
Lead Free
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Configuration :
SINGLE WITH BUILT-IN DIODE
Input Capacitance (Ciss) (Max) @ Vds :
195pF @ 10V
Vgs(th) (Max) @ Id :
1V @ 250μA
Continuous Drain Current (ID) :
1A
Power Dissipation :
500mW
Terminal Position :
Dual
Factory Lead Time :
10 Weeks
Packaging :
Cut Tape (CT)
JESD-609 Code :
e3
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
Voltage - Rated DC :
-20V
Drain to Source Voltage (Vdss) :
20V
Terminal Form :
Gull wing
Drive Voltage (Max Rds On,Min Rds On) :
2.7V 4.5V
Transistor Element Material :
SILICON
Datasheets
NDS332P
Introducing Transistors - FETs, MOSFETs - Single onsemi NDS332P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Pins:3, Package / Case:TO-236-3, SC-59, SOT-23-3, Mounting Type:Surface Mount, NDS332P pinout, NDS332P datasheet PDF, NDS332P amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NDS332P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NDS332P


P-Channel Cut Tape (CT) 300m Ω @ 1.1A, 4.5V ±8V 195pF @ 10V 5nC @ 4.5V 20V TO-236-3, SC-59, SOT-23-3

NDS332P Description

These P-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's

proprietary, high cell density, DMOS technology. This very high-density process is specially tailored to minimize on-state

resistance. These devices are particularly suited for low voltage applications such as notebook computer power

management, portable electronics, and other battery-powered circuits where fast high-side switching and low

in-line power loss are needed in a very small outline surface mount package.



NDS332P Features

-1 A, -20 V, RDS(ON) = 0.41 W @ VGS= -2.7 V

RDS(ON) = 0.3 W @ VGS = -4.5 V.

Very low-level gate drive requirements allow direct

operation in 3V circuits. VGS(th) < 1.0V.

Proprietary package design using the copper lead frame for

superior thermal and electrical capabilities.

High-density cell design for extremely low RDS(ON).

Exceptional on-resistance and maximum DC current

capability.

Compact industry-standard SOT-23 surface Mount

package


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