NDS332P
- Mfr.Part #
- NDS332P
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 1A SUPERSOT3
- Stock
- 22,816
- In Stock :
- 22,816
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 1A
- Qualification Status :
- Not Qualified
- Surface Mount :
- yes
- Power Dissipation-Max :
- 500mW Ta
- FET Type :
- P-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 10 Weeks
- Terminal Finish :
- Tin (Sn)
- Drain to Source Voltage (Vdss) :
- 20V
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 1A Ta
- Pbfree Code :
- yes
- Published :
- 2017
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Rds On (Max) @ Id, Vgs :
- 300m Ω @ 1.1A, 4.5V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate Charge (Qg) (Max) @ Vgs :
- 5nC @ 4.5V
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.7V 4.5V
- RoHS Status :
- ROHS3 Compliant
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, ESD RATED
- Input Capacitance (Ciss) (Max) @ Vds :
- 195pF @ 10V
- Width :
- 3.05mm
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain Current-Max (Abs) (ID) :
- 1A
- Vgs (Max) :
- ±8V
- Power Dissipation :
- 500mW
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Form :
- Gull wing
- Drain to Source Breakdown Voltage :
- -20V
- Current Rating :
- -1A
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Cut Tape (CT)
- Voltage - Rated DC :
- -20V
- HTS Code :
- 8541.21.00.95
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- NDS332P

P-Channel Cut Tape (CT) 300m Ω @ 1.1A, 4.5V ±8V 195pF @ 10V 5nC @ 4.5V 20V TO-236-3, SC-59, SOT-23-3
NDS332P Description
These P-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's
proprietary, high cell density, DMOS technology. This very high-density process is specially tailored to minimize on-state
resistance. These devices are particularly suited for low voltage applications such as notebook computer power
management, portable electronics, and other battery-powered circuits where fast high-side switching and low
in-line power loss are needed in a very small outline surface mount package.
NDS332P Features
-1 A, -20 V, RDS(ON) = 0.41 W @ VGS= -2.7 V
RDS(ON) = 0.3 W @ VGS = -4.5 V.
Very low-level gate drive requirements allow direct
operation in 3V circuits. VGS(th) < 1.0V.
Proprietary package design using the copper lead frame for
superior thermal and electrical capabilities.
High-density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current
capability.
Compact industry-standard SOT-23 surface Mount
package
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