NDS332P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

300m Ω @ 1.1A, 4.5V

Additional Feature :

LOGIC LEVEL COMPATIBLE, ESD RATED

Continuous Drain Current (ID) :

1A

Drain to Source Breakdown Voltage :

-20V

Voltage - Rated DC :

-20V

Vgs(th) (Max) @ Id :

1V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 4.5V

ECCN Code :

EAR99

Power Dissipation :

500mW

Surface Mount :

yes

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

FET Type :

P-Channel

Transistor Element Material :

SILICON

HTS Code :

8541.21.00.95

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Pbfree Code :

yes

Power Dissipation-Max :

500mW Ta

JESD-609 Code :

e3

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

195pF @ 10V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Width :

3.05mm

Terminal Form :

Gull wing

Terminal Position :

Dual

Packaging :

Cut Tape (CT)

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

Current Rating :

-1A

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

1A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-236-3, SC-59, SOT-23-3

Vgs (Max) :

±8V

Factory Lead Time :

10 Weeks

Published :

2017

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

1A Ta

Drain to Source Voltage (Vdss) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)