NDS352AP

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Resistance :

500MOhm

Turn-Off Delay Time :

35 ns

Voltage - Rated DC :

-30V

REACH SVHC :

No SVHC

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

135pF @ 15V

Current - Continuous Drain (Id) @ 25°C :

900mA Ta

Terminal Form :

Gull wing

Number of Elements :

1

ECCN Code :

EAR99

Height :

1.22mm

Mount :

Surface Mount

Published :

1997

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Continuous Drain Current (ID) :

900mA

Number of Channels :

1

Weight :

30mg

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Drain to Source Voltage (Vdss) :

30V

Lead Free :

Lead Free

Number of Pins :

3

Threshold Voltage :

-800mV

Gate Charge (Qg) (Max) @ Vgs :

3nC @ 4.5V

Dual Supply Voltage :

-30V

Packaging :

Cut Tape (CT)

Radiation Hardening :

No

Transistor Element Material :

SILICON

Power Dissipation :

500mW

Width :

3.05mm

Transistor Application :

SWITCHING

Package / Case :

TO-236-3, SC-59, SOT-23-3

Drain to Source Breakdown Voltage :

-30V

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

300m Ω @ 1A, 10V

Factory Lead Time :

10 Weeks

Pbfree Code :

yes

Max Junction Temperature (Tj) :

150°C

Turn On Delay Time :

8 ns

Additional Feature :

LOGIC LEVEL COMPATIBLE

Rise Time :

16ns

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

16 ns

FET Type :

P-Channel

Drain Current-Max (Abs) (ID) :

0.9A

RoHS Status :

ROHS3 Compliant

Nominal Vgs :

-1.7 V

Contact Plating :

Tin

JESD-609 Code :

e3

Power Dissipation-Max :

500mW Ta

Current Rating :

-900mA

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)