NDS336P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Terminal Finish :

MATTE TIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

200m Ω @ 1.3A, 4.5V

Number of Elements :

1

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

1.2A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.2Ohm

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

Transistor Element Material :

SILICON

Power Dissipation-Max :

500mW Ta

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

20V

FET Type :

P-Channel

Terminal Position :

Dual

DS Breakdown Voltage-Min :

20V

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

1V @ 250μA

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

1.2A Ta

Vgs (Max) :

±8V

Additional Feature :

LOGIC LEVEL COMPATIBLE

JEDEC-95 Code :

TO-236AB

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Qualification Status :

COMMERCIAL

Package / Case :

TO-236-3, SC-59, SOT-23-3

JESD-30 Code :

R-PDSO-G3

Input Capacitance (Ciss) (Max) @ Vds :

360pF @ 10V

Gate Charge (Qg) (Max) @ Vgs :

8.5nC @ 4.5V