NDS355AN

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

32 ns

Rise Time :

32ns

Max Junction Temperature (Tj) :

150°C

Terminal Form :

Gull wing

Width :

3.05mm

Turn-Off Delay Time :

13 ns

Element Configuration :

Single

Mounting Type :

Surface Mount

Length :

2.92mm

Input Capacitance (Ciss) (Max) @ Vds :

195pF @ 15V

Number of Pins :

3

Vgs (Max) :

±20V

Turn On Delay Time :

10 ns

Pbfree Code :

yes

Termination :

SMD/SMT

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Voltage - Rated DC :

30V

REACH SVHC :

No SVHC

Nominal Vgs :

1.6 V

Current Rating :

1.7A

Published :

1998

Package / Case :

TO-236-3, SC-59, SOT-23-3

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

85m Ω @ 1.9A, 10V

Vgs(th) (Max) @ Id :

2V @ 250μA

Height :

1.22mm

Power Dissipation :

500mW

Lead Free :

Lead Free

Factory Lead Time :

10 Weeks

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Dual Supply Voltage :

30V

Power Dissipation-Max :

500mW Ta

Current - Continuous Drain (Id) @ 25°C :

1.7A Ta

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Number of Elements :

1

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Weight :

30mg

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Drain to Source Breakdown Voltage :

30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Dual

Qualification Status :

Not Qualified

Number of Channels :

1

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Resistance :

85mOhm

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

1.7A

FET Type :

N-Channel

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 5V