NDS351AN
- Mfr.Part #
- NDS351AN
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 1.4A SUPERSOT3
- Stock
- 4,777
- In Stock :
- 4,777
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 8ns
- Fall Time (Typ) :
- 8 ns
- Weight :
- 30mg
- Input Capacitance (Ciss) (Max) @ Vds :
- 145pF @ 15V
- Current - Continuous Drain (Id) @ 25°C :
- 1.4A Ta
- Series :
- PowerTrench®
- Operating Mode :
- ENHANCEMENT MODE
- Current Rating :
- 1.2A
- Factory Lead Time :
- 10 Weeks
- Nominal Vgs :
- 2.1 V
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Turn-Off Delay Time :
- 16 ns
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 500mW
- Qualification Status :
- Not Qualified
- Resistance :
- 160mOhm
- Mounting Type :
- Surface Mount
- Dual Supply Voltage :
- 30V
- Max Junction Temperature (Tj) :
- 150°C
- Terminal Form :
- Gull wing
- Threshold Voltage :
- 2.1V
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 1.2A
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Width :
- 3.05mm
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Terminal Position :
- Dual
- Height :
- 1.22mm
- Vgs (Max) :
- ±20V
- Packaging :
- Tape and Reel (TR)
- Drain to Source Breakdown Voltage :
- 30V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Turn On Delay Time :
- 3 ns
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 1.8nC @ 4.5V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Number of Channels :
- 1
- Published :
- 2003
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Voltage - Rated DC :
- 30V
- Power Dissipation-Max :
- 500mW Ta
- Termination :
- SMD/SMT
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Rds On (Max) @ Id, Vgs :
- 160m Ω @ 1.4A, 10V
- Datasheets
- NDS351AN

N-Channel Tape & Reel (TR) 160m Ω @ 1.4A, 10V ±20V 145pF @ 15V 1.8nC @ 4.5V TO-236-3, SC-59, SOT-23-3
NDS351AN Description
These N-Channel Logic Level MOSFETs are produced using ON Semiconductor’s advanced PowerTrench process that has been specially tailored
to minimize the on-state resistance and yet maintain superior switching performance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery-powered circuits where fast switching and low in-line power loss are needed in a very small outline surface mount package.
NDS351AN Features
1.4 A, 30 V. RDS(ON) = 160 mW @ VGS = 10 V
RDS(ON) = 250 mW @ VGS = 4.5 V
Ultra-Low gate charge
Industry standard outline SOT-23 surface mount
package using proprietary SuperSOTTM-3 design for
superior thermal and electrical capabilities
High performance trench technology for extremely
low RDS(ON)
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