NDS331N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

30mg

Rds On (Max) @ Id, Vgs :

160m Ω @ 1.5A, 4.5V

Pbfree Code :

yes

Power Dissipation-Max :

500mW Ta

Drain to Source Breakdown Voltage :

20V

Turn On Delay Time :

5 ns

Mount :

Surface Mount

Power Dissipation :

500mW

ECCN Code :

EAR99

Number of Elements :

1

Package / Case :

TO-236-3, SC-59, SOT-23-3

Resistance :

160mOhm

Vgs (Max) :

±8V

Length :

2.92mm

Max Junction Temperature (Tj) :

150°C

Input Capacitance (Ciss) (Max) @ Vds :

162pF @ 10V

Fall Time (Typ) :

5 ns

Factory Lead Time :

10 Weeks

Radiation Hardening :

No

Terminal Finish :

Tin (Sn)

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Rise Time :

25ns

Turn-Off Delay Time :

10 ns

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

1V @ 250μA

Gate to Source Voltage (Vgs) :

8V

Height :

1.22mm

Published :

1998

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

1.3A

Number of Pins :

3

Element Configuration :

Single

Number of Channels :

1

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

1.3A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Voltage - Rated DC :

20V

Threshold Voltage :

700mV

Width :

1.4mm

Nominal Vgs :

700 mV

Current Rating :

1.3A

REACH SVHC :

No SVHC

Number of Terminations :

3

Transistor Application :

SWITCHING

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 4.5V

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V