NDS331N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

5 ns

Package / Case :

TO-236-3, SC-59, SOT-23-3

Input Capacitance (Ciss) (Max) @ Vds :

162pF @ 10V

Rise Time :

25ns

Power Dissipation :

500mW

ECCN Code :

EAR99

Max Junction Temperature (Tj) :

150°C

Factory Lead Time :

10 Weeks

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

1.3A Ta

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Fall Time (Typ) :

5 ns

Number of Channels :

1

Transistor Application :

SWITCHING

Power Dissipation-Max :

500mW Ta

Vgs (Max) :

±8V

Number of Terminations :

3

Continuous Drain Current (ID) :

1.3A

RoHS Status :

ROHS3 Compliant

Length :

2.92mm

Number of Pins :

3

Threshold Voltage :

700mV

Voltage - Rated DC :

20V

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 4.5V

Drain to Source Breakdown Voltage :

20V

Turn-Off Delay Time :

10 ns

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

8V

Pbfree Code :

yes

Resistance :

160mOhm

Mount :

Surface Mount

Width :

1.4mm

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

1V @ 250μA

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Nominal Vgs :

700 mV

Height :

1.22mm

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Radiation Hardening :

No

Published :

1998

Rds On (Max) @ Id, Vgs :

160m Ω @ 1.5A, 4.5V

Weight :

30mg

Current Rating :

1.3A