NDS351N
- Mfr.Part #
- NDS351N
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 6,767
- In Stock :
- 6,767
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 26 ns
- Voltage - Rated DC :
- 30V
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Power Dissipation-Max :
- 500mW Ta
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 140pF @ 10V
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Weight :
- 30mg
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 30V
- Radiation Hardening :
- No
- Current Rating :
- 1.1A
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Rds On (Max) @ Id, Vgs :
- 160m Ω @ 1.4A, 10V
- Lead Free :
- Contains Lead
- Power Dissipation :
- 500mW
- Rise Time :
- 16ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 10 Weeks
- Turn On Delay Time :
- 9 ns
- Number of Pins :
- 3
- Continuous Drain Current (ID) :
- 1.1A
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 3.5nC @ 5V
- Terminal Form :
- Gull wing
- Published :
- 2008
- Terminal Finish :
- Tin (Sn)
- Fall Time (Typ) :
- 16 ns
- JESD-609 Code :
- e3
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Pbfree Code :
- yes
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 1.1A Ta
- Datasheets
- NDS351N

N-Channel Tape & Reel (TR) 160m Ω @ 1.4A, 10V ±20V 140pF @ 10V 3.5nC @ 5V TO-236-3, SC-59, SOT-23-3
NDS351N Description
These N-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high-density process is specially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery-powered circuits where fast switching and low in-line power loss are needed in a very small outline surface mount package.
NDS351N Features
-
1.1A, 30V. RDS(ON) = 0.25W @ VGS = 4.5V.
-
Proprietary package design using the copper lead frame for superior thermal and electrical capabilities.
-
High-density cell design for extremely low RDS(ON).
-
Exceptional on-resistance and maximum DC current capability.
-
Compact industry-standard SOT-23 surface-mount package.
NDS351N Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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