NDS351N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

10 Weeks

Drain to Source Breakdown Voltage :

30V

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

3.5nC @ 5V

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Terminations :

3

Number of Pins :

3

Published :

2008

Current - Continuous Drain (Id) @ 25°C :

1.1A Ta

Power Dissipation :

500mW

Terminal Position :

Dual

Transistor Element Material :

SILICON

FET Type :

N-Channel

Element Configuration :

Single

Power Dissipation-Max :

500mW Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2V @ 250μA

Voltage - Rated DC :

30V

Number of Elements :

1

Radiation Hardening :

No

Additional Feature :

LOGIC LEVEL COMPATIBLE

Turn-Off Delay Time :

26 ns

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Mount :

Surface Mount

Lead Free :

Contains Lead

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pbfree Code :

yes

Fall Time (Typ) :

16 ns

Turn On Delay Time :

9 ns

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Weight :

30mg

JESD-609 Code :

e3

Continuous Drain Current (ID) :

1.1A

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 10V

Rds On (Max) @ Id, Vgs :

160m Ω @ 1.4A, 10V

Terminal Finish :

Tin (Sn)

Current Rating :

1.1A

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Transistor Application :

SWITCHING

Rise Time :

16ns