NDS356P

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

1.1A Ta

JESD-30 Code :

R-PDSO-G3

Drain Current-Max (Abs) (ID) :

1.1A

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Additional Feature :

LOGIC LEVEL COMPATIBLE

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Power Dissipation-Max :

500mW Ta

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 5V

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.21Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

20V

RoHS Status :

ROHS3 Compliant

FET Type :

P-Channel

Terminal Finish :

Tin

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

yes

Vgs (Max) :

±12V

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Qualification Status :

COMMERCIAL

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

210m Ω @ 1.3A, 10V

DS Breakdown Voltage-Min :

20V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 10V