NDS356P
- Mfr.Part #
- NDS356P
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 1.1A SUPERSOT3
- Stock
- 26,858
- In Stock :
- 26,858
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 20V
- Drain Current-Max (Abs) (ID) :
- 1.1A
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Finish :
- Tin
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Packaging :
- Tape and Reel (TR)
- JESD-30 Code :
- R-PDSO-G3
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- Drain-source On Resistance-Max :
- 0.21Ohm
- Pin Count :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 5nC @ 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 180pF @ 10V
- Rds On (Max) @ Id, Vgs :
- 210m Ω @ 1.3A, 10V
- Mounting Type :
- Surface Mount
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs (Max) :
- ±12V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 1.1A Ta
- Qualification Status :
- COMMERCIAL
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 500mW Ta
- Pbfree Code :
- yes
- FET Type :
- P-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DS Breakdown Voltage-Min :
- 20V
- Datasheets
- NDS356P

P-Channel Tape & Reel (TR) 210m Ω @ 1.3A, 10V ±12V 180pF @ 10V 5nC @ 5V 20V TO-236-3, SC-59, SOT-23-3
NDS356P Overview
A device's maximal input capacitance is 180pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 1.1A, which is the maximum continuous current the device can conduct.To maintain normal operation, it is recommended that the DS breakdown voltage be above 20V.This transistor requires a 20V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
NDS356P Features
a 20V drain to source voltage (Vdss)
NDS356P Applications
There are a lot of Rochester Electronics, LLC
NDS356P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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