NDS356AP

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

4.4nC @ 5V

Dual Supply Voltage :

-30V

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

-30V

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

1.1A Ta

Terminal Position :

Dual

Weight :

30mg

Drain to Source Voltage (Vdss) :

30V

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Published :

1997

Current Rating :

-1.1A

Fall Time (Typ) :

17 ns

Packaging :

Tape and Reel (TR)

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Rds On (Max) @ Id, Vgs :

200m Ω @ 1.3A, 10V

Radiation Hardening :

No

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rise Time :

17ns

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Resistance :

300mOhm

Mount :

Surface Mount

Termination :

SMD/SMT

Nominal Vgs :

-2 V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Pins :

3

Element Configuration :

Single

Number of Elements :

1

Power Dissipation :

500mW

Pbfree Code :

yes

Vgs (Max) :

±20V

Factory Lead Time :

10 Weeks

Number of Terminations :

3

Terminal Form :

Gull wing

Turn On Delay Time :

8 ns

Power Dissipation-Max :

500mW Ta

Drain to Source Breakdown Voltage :

-30V

Input Capacitance (Ciss) (Max) @ Vds :

280pF @ 10V

Width :

3.05mm

FET Type :

P-Channel

JESD-609 Code :

e3

Turn-Off Delay Time :

53 ns

ECCN Code :

EAR99

Continuous Drain Current (ID) :

1.1A

Terminal Finish :

Tin (Sn)