MSB92WT1
- Mfr.Part #
- MSB92WT1
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 300V 0.5A SC70-3
- Stock
- 38,226
- In Stock :
- 38,226
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Dual
- Frequency :
- 50MHz
- Voltage - Rated DC :
- -300V
- Radiation Hardening :
- No
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Factory Lead Time :
- 2 Weeks
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 300V
- Max Breakdown Voltage :
- 300V
- Collector Emitter Breakdown Voltage :
- 300V
- Transistor Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 250nA ICBO
- hFE Min :
- 25
- Surface Mount :
- yes
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Transition Frequency :
- 50MHz
- Max Collector Current :
- 500mA
- Package / Case :
- SC-70, SOT-323
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Max Power Dissipation :
- 150mW
- Terminal Form :
- Gull wing
- Pin Count :
- 3
- Published :
- 2010
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 300V
- Current Rating :
- -500mA
- Transistor Application :
- AMPLIFIER
- Polarity/Channel Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Base Part Number :
- MSB92W
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 50MHz
- Collector Emitter Saturation Voltage :
- -500mV
- Power Dissipation :
- 150mW
- Number of Pins :
- 3
- Datasheets
- MSB92WT1

PNP 150°C TJ 250nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
MSB92WT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 1mA 10V.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 2mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.In the part, the transition frequency is 50MHz.This device can take an input voltage of 300V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
MSB92WT1G Features
the DC current gain for this device is 120 @ 1mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz
MSB92WT1G Applications
There are a lot of ON Semiconductor
MSB92WT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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