MSB92ASWT1
- Mfr.Part #
- MSB92ASWT1
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 300V 0.5A SC70-3
- Stock
- 23,527
- In Stock :
- 23,527
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 500mA
- Polarity/Channel Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Max Power Dissipation :
- 150mW
- Package / Case :
- SC-70, SOT-323
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- -500mV
- Collector Emitter Breakdown Voltage :
- 300V
- Current - Collector Cutoff (Max) :
- 250nA ICBO
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- MSB92W
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 300V
- Published :
- 2006
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Transition Frequency :
- 50MHz
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Power Dissipation :
- 150mW
- hFE Min :
- 120
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 10V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Frequency :
- 50MHz
- Factory Lead Time :
- 11 Weeks
- Collector Emitter Voltage (VCEO) :
- 300V
- Voltage - Rated DC :
- -300V
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Transistor Type :
- PNP
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 300V
- Gain Bandwidth Product :
- 50MHz
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- AMPLIFIER
- Pin Count :
- 3
- Current Rating :
- -500mA
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Packaging :
- Tape and Reel (TR)
- Surface Mount :
- yes
- Datasheets
- MSB92ASWT1

PNP 150°C TJ 250nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
MSB92ASWT1G Overview
In this device, the DC current gain is 120 @ 1mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 2mA, 20mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Input voltage breakdown is available at 300V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MSB92ASWT1G Features
the DC current gain for this device is 120 @ 1mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz
MSB92ASWT1G Applications
There are a lot of ON Semiconductor
MSB92ASWT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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