MSB92ASWT1

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Mfr.Part #
MSB92ASWT1
Manufacturer
onsemi
Package / Case
SC-70, SOT-323
Datasheet
Download
Description
TRANS PNP 300V 0.5A SC70-3
Stock
23,527
In Stock :
23,527

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Max Collector Current :
500mA
Polarity/Channel Type :
PNP
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Contact Plating :
Tin
Max Power Dissipation :
150mW
Package / Case :
SC-70, SOT-323
Terminal Form :
Gull wing
Transistor Element Material :
SILICON
Collector Emitter Saturation Voltage :
-500mV
Collector Emitter Breakdown Voltage :
300V
Current - Collector Cutoff (Max) :
250nA ICBO
Operating Temperature :
150°C TJ
Base Part Number :
MSB92W
Mounting Type :
Surface Mount
Collector Base Voltage (VCBO) :
300V
Published :
2006
Vce Saturation (Max) @ Ib, Ic :
500mV @ 2mA, 20mA
Transition Frequency :
50MHz
Number of Pins :
3
Lead Free :
Lead Free
Power Dissipation :
150mW
hFE Min :
120
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 1mA 10V
Time@Peak Reflow Temperature-Max (s) :
40
Frequency :
50MHz
Factory Lead Time :
11 Weeks
Collector Emitter Voltage (VCEO) :
300V
Voltage - Rated DC :
-300V
Radiation Hardening :
No
Emitter Base Voltage (VEBO) :
5V
Terminal Position :
Dual
JESD-609 Code :
e3
Number of Elements :
1
ECCN Code :
EAR99
Transistor Type :
PNP
Number of Terminations :
3
Pbfree Code :
yes
RoHS Status :
ROHS3 Compliant
Max Breakdown Voltage :
300V
Gain Bandwidth Product :
50MHz
Element Configuration :
Single
Peak Reflow Temperature (Cel) :
260
Transistor Application :
AMPLIFIER
Pin Count :
3
Current Rating :
-500mA
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Packaging :
Tape and Reel (TR)
Surface Mount :
yes
Datasheets
MSB92ASWT1
Introducing Transistors - Bipolar (BJT) - Single onsemi MSB92ASWT1 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SC-70, SOT-323, Operating Temperature:150°C TJ, Base Part Number:MSB92W, Mounting Type:Surface Mount, Number of Pins:3, Number of Terminations:3, MSB92ASWT1 pinout, MSB92ASWT1 datasheet PDF, MSB92ASWT1 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MSB92ASWT1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MSB92ASWT1


PNP 150°C TJ 250nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount

MSB92ASWT1G Overview


In this device, the DC current gain is 120 @ 1mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 2mA, 20mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Input voltage breakdown is available at 300V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.

MSB92ASWT1G Features


the DC current gain for this device is 120 @ 1mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz


MSB92ASWT1G Applications


There are a lot of ON Semiconductor
MSB92ASWT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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