MSB92WT1G
- Mfr.Part #
- MSB92WT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 300V 0.5A SC70-3
- Stock
- 2,586
- In Stock :
- 2,586
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 150mW
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Transistor Type :
- PNP
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 300V
- Max Breakdown Voltage :
- 300V
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 250nA ICBO
- Polarity/Channel Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 5V
- Base Part Number :
- MSB92W
- Collector Emitter Voltage (VCEO) :
- 300V
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- hFE Min :
- 25
- Voltage - Rated DC :
- -300V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 300V
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 50MHz
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Current Rating :
- -500mA
- Transistor Application :
- AMPLIFIER
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- -500mV
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2010
- Surface Mount :
- yes
- Max Power Dissipation :
- 150mW
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 10V
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Factory Lead Time :
- 2 Weeks
- Transition Frequency :
- 50MHz
- Frequency :
- 50MHz
- Package / Case :
- SC-70, SOT-323
- Datasheets
- MSB92WT1G

PNP 150°C TJ 250nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
MSB92WT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 1mA 10V.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 2mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.In the part, the transition frequency is 50MHz.This device can take an input voltage of 300V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
MSB92WT1G Features
the DC current gain for this device is 120 @ 1mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz
MSB92WT1G Applications
There are a lot of ON Semiconductor
MSB92WT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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