MSB92AWT1G
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- Mfr.Part #
- MSB92AWT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 300V 0.5A SC70-3
- Stock
- 3,698
- In Stock ：
- 3,698
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 250nA ICBO
- Lead Free :
- Lead Free
- Frequency :
- 50MHz
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- MSB92W
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- -500mV
- Voltage - Rated DC :
- -300V
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Transistor Application :
- AMPLIFIER
- Terminal Form :
- Gull wing
- Published :
- 2006
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 300V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 50MHz
- Polarity/Channel Type :
- PNP
- Package / Case :
- SC-70, SOT-323
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 300V
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 10V
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 150mW
- Radiation Hardening :
- No
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- -500mA
- Power Dissipation :
- 150mW
- Gain Bandwidth Product :
- 50MHz
- hFE Min :
- 120
- Collector Emitter Breakdown Voltage :
- 300V
- Max Collector Current :
- 500mA
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Factory Lead Time :
- 2 Weeks
- Transistor Type :
- PNP
- Surface Mount :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- MSB92AWT1G
PNP 150°C TJ 250nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
MSB92AWT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 1mA 10V.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.A transition frequency of 50MHz is present in the part.Collector current can be as low as 500mA volts at its maximum.
MSB92AWT1G Features
the DC current gain for this device is 120 @ 1mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz
MSB92AWT1G Applications
There are a lot of ON Semiconductor
MSB92AWT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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|---|---|---|---|
| MSB92AS1WT1G | onsemi | 19,904 | TRANS PNP 300V 0.5A SC70-3 |
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| MSB92ASWT1G | onsemi | 5,945 | TRANS PNP 300V 0.5A SC70-3 |
| MSB92AWT1 | onsemi | 2,492 | TRANS PNP 300V 0.5A SC70-3 |
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| MSB92WT1 | onsemi | 38,226 | TRANS PNP 300V 0.5A SC70-3 |
| MSB92WT1G | onsemi | 2,586 | TRANS PNP 300V 0.5A SC70-3 |
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