MSB92AS1WT1G
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- Mfr.Part #
- MSB92AS1WT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 300V 0.5A SC70-3
- Stock
- 19,904
- In Stock ：
- 19,904
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 10V
- Transition Frequency :
- 50MHz
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Package / Case :
- SC-70, SOT-323
- Published :
- 2010
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 300V
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 50MHz
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Base Part Number :
- MSB92W
- Terminal Finish :
- Tin (Sn)
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Power Dissipation :
- 150mW
- Number of Terminations :
- 3
- Transistor Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- -5V
- Current - Collector Cutoff (Max) :
- 250nA ICBO
- Max Collector Current :
- 500mA
- Collector Emitter Breakdown Voltage :
- 300V
- Transistor Application :
- AMPLIFIER
- Number of Pins :
- 3
- hFE Min :
- 25
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Surface Mount :
- yes
- Max Power Dissipation :
- 150mW
- Frequency :
- 50MHz
- Collector Base Voltage (VCBO) :
- 300V
- Polarity/Channel Type :
- PNP
- Factory Lead Time :
- 13 Weeks
- Datasheets
- MSB92AS1WT1G
PNP 150°C TJ 250nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
MSB92AS1WT1G Overview
This device has a DC current gain of 120 @ 1mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 2mA, 20mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.As you can see, the part has a transition frequency of 50MHz.A maximum collector current of 500mA volts is possible.
MSB92AS1WT1G Features
the DC current gain for this device is 120 @ 1mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at -5V
a transition frequency of 50MHz
MSB92AS1WT1G Applications
There are a lot of ON Semiconductor
MSB92AS1WT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| MSB92ASWT1 | onsemi | 23,527 | TRANS PNP 300V 0.5A SC70-3 |
| MSB92ASWT1G | onsemi | 5,945 | TRANS PNP 300V 0.5A SC70-3 |
| MSB92AWT1 | onsemi | 2,492 | TRANS PNP 300V 0.5A SC70-3 |
| MSB92AWT1G | onsemi | 3,698 | TRANS PNP 300V 0.5A SC70-3 |
| MSB92T1 | onsemi | 138,292 | TRANS PNP 300V 0.15A SC59 |
| MSB92T1G | onsemi | 3,606 | TRANS PNP 300V 0.15A SC59 |
| MSB92WT1 | onsemi | 38,226 | TRANS PNP 300V 0.5A SC70-3 |
| MSB92WT1G | onsemi | 2,586 | TRANS PNP 300V 0.5A SC70-3 |
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