MSB92ASWT1G
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- Mfr.Part #
- MSB92ASWT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 300V 0.5A SC70-3
- Stock
- 5,945
- In Stock ：
- 5,945
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Transistor Application :
- AMPLIFIER
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 300V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 10V
- Surface Mount :
- yes
- Gain Bandwidth Product :
- 50MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Max Collector Current :
- 500mA
- Transistor Type :
- PNP
- Max Power Dissipation :
- 150mW
- Max Breakdown Voltage :
- 300V
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- -500mV
- Current - Collector Cutoff (Max) :
- 250nA ICBO
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Power Dissipation :
- 150mW
- Polarity/Channel Type :
- PNP
- Terminal Position :
- Dual
- Published :
- 2006
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 300V
- Base Part Number :
- MSB92W
- Factory Lead Time :
- 11 Weeks
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 50MHz
- Transistor Element Material :
- SILICON
- Package / Case :
- SC-70, SOT-323
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Element Configuration :
- Single
- hFE Min :
- 120
- Voltage - Rated DC :
- -300V
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 50MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Current Rating :
- -500mA
- Collector Emitter Breakdown Voltage :
- 300V
- Contact Plating :
- Tin
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Datasheets
- MSB92ASWT1G
PNP 150°C TJ 250nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
MSB92ASWT1G Overview
In this device, the DC current gain is 120 @ 1mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 2mA, 20mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Input voltage breakdown is available at 300V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MSB92ASWT1G Features
the DC current gain for this device is 120 @ 1mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz
MSB92ASWT1G Applications
There are a lot of ON Semiconductor
MSB92ASWT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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|---|---|---|---|
| MSB92AS1WT1G | onsemi | 19,904 | TRANS PNP 300V 0.5A SC70-3 |
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| MSB92AWT1 | onsemi | 2,492 | TRANS PNP 300V 0.5A SC70-3 |
| MSB92AWT1G | onsemi | 3,698 | TRANS PNP 300V 0.5A SC70-3 |
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| MSB92WT1 | onsemi | 38,226 | TRANS PNP 300V 0.5A SC70-3 |
| MSB92WT1G | onsemi | 2,586 | TRANS PNP 300V 0.5A SC70-3 |
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