MSB92T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

1

Transistor Application :

AMPLIFIER

Operating Temperature :

150°C TJ

Collector Base Voltage (VCBO) :

300V

Transistor Type :

PNP

Terminal Finish :

Tin (Sn)

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 30mA 10V

Pin Count :

3

Voltage - Rated DC :

-300V

Frequency :

50MHz

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Transition Frequency :

50MHz

Factory Lead Time :

8 Weeks

Number of Terminations :

3

Terminal Position :

Dual

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Current Rating :

-500mA

Published :

2009

Max Collector Current :

150mA

Max Power Dissipation :

150mW

Number of Pins :

3

Emitter Base Voltage (VEBO) :

5V

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Polarity/Channel Type :

PNP

JESD-609 Code :

e3

hFE Min :

25

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

300V

Lead Free :

Lead Free

Pbfree Code :

yes

Gain Bandwidth Product :

50MHz

Terminal Form :

Gull wing

Collector Emitter Breakdown Voltage :

300V

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation :

150mW

Vce Saturation (Max) @ Ib, Ic :

500mV @ 2mA, 20mA

Current - Collector Cutoff (Max) :

250nA ICBO

Element Configuration :

Single