MS1227

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Type :

NPN

Terminal Position :

Radial

Number of Elements :

1

JESD-609 Code :

e0

Pbfree Code :

No

Collector-Base Capacitance-Max :

135pF

Max Power Dissipation :

80W

Collector Emitter Breakdown Voltage :

18V

Packaging :

Bulk

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

4.5A

Configuration :

Single

RoHS Status :

RoHS Compliant

Package / Case :

M113

Number of Pins :

4

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Terminal Form :

Flat

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1A 5V

Gain :

15dB

Additional Feature :

WITH EMITTER BALLASTING RESISTORS

Operating Temperature :

200°C TJ

Max Frequency :

30MHz

Collector Base Voltage (VCBO) :

36V

Mounting Type :

Chassis Mount

Frequency - Transition :

30MHz

Polarity/Channel Type :

NPN

Lifecycle Status :

IN PRODUCTION (Last Updated: 2 weeks ago)

Terminal Finish :

TIN LEAD

Highest Frequency Band :

HIGH FREQUENCY B

Radiation Hardening :

No

Pin Count :

4

Mount :

Chassis Mount, Screw

Lead Free :

Lead Free

Output Power :

20W

Collector Emitter Voltage (VCEO) :

18V

Number of Terminations :

4