MS1227

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Number of Pins :

4

Number of Terminations :

4

Max Power Dissipation :

80W

Transistor Element Material :

SILICON

Max Frequency :

30MHz

Package / Case :

M113

Max Collector Current :

4.5A

Highest Frequency Band :

HIGH FREQUENCY B

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1A 5V

Pbfree Code :

No

Frequency - Transition :

30MHz

Lead Free :

Lead Free

Operating Temperature :

200°C TJ

Additional Feature :

WITH EMITTER BALLASTING RESISTORS

Collector Emitter Voltage (VCEO) :

18V

Mounting Type :

Chassis Mount

Terminal Form :

Flat

JESD-609 Code :

e0

Polarity/Channel Type :

NPN

Terminal Position :

Radial

Transistor Type :

NPN

Gain :

15dB

Number of Elements :

1

Mount :

Chassis Mount, Screw

Pin Count :

4

ECCN Code :

EAR99

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Bulk

Collector Emitter Breakdown Voltage :

18V

Collector Base Voltage (VCBO) :

36V

Collector-Base Capacitance-Max :

135pF

Configuration :

Single

RoHS Status :

RoHS Compliant

Output Power :

20W

Lifecycle Status :

IN PRODUCTION (Last Updated: 2 weeks ago)

Terminal Finish :

TIN LEAD