MS1202

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

DC Current Gain (hFE) (Min) @ Ic, Vce :

5 @ 100mA 5V

Configuration :

Single

Mount :

Chassis Mount, Stud

Operating Temperature :

200°C TJ

Power - Max :

15W

Case Connection :

Emitter

Frequency - Transition :

118MHz~136MHz

Number of Elements :

1

Package / Case :

M135

Gain :

8.4dB

Max Power Dissipation :

15W

Pin Count :

4

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Number of Terminations :

4

Transistor Application :

AMPLIFIER

Transistor Type :

NPN

Collector Emitter Voltage (VCEO) :

35V

Highest Frequency Band :

VERY HIGH FREQUENCY B

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

35V

Packaging :

Bulk

Mounting Type :

Chassis Mount

Max Collector Current :

1A

Number of Pins :

4

RoHS Status :

RoHS Compliant

Terminal Position :

Radial

Polarity/Channel Type :

NPN

Radiation Hardening :

No

Additional Feature :

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector-Base Capacitance-Max :

15pF

Published :

2003

Terminal Form :

Flat

Collector Base Voltage (VCBO) :

65V

Transistor Element Material :

SILICON