MRF581G

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

200mA

Noise Figure (dB Typ @ f) :

3dB ~ 3.5dB @ 500MHz

ECCN Code :

EAR99

Transition Frequency :

5000MHz

Max Collector Current :

200mA

Pbfree Code :

yes

JESD-30 Code :

O-PRDB-F4

Operating Temperature :

150°C TJ

Collector Emitter Breakdown Voltage :

18V

Pin Count :

4

Collector-Base Capacitance-Max :

3pF

Reach Compliance Code :

Unknown

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Packaging :

Bulk

Additional Feature :

LOW NOISE

Published :

2008

Transistor Application :

AMPLIFIER

Base Part Number :

MRF581

Package / Case :

Micro-X ceramic (84C)

Configuration :

Single

Polarity/Channel Type :

NPN

Terminal Finish :

TIN SILVER COPPER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 50mA 5V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Power Dissipation :

1.25W

Terminal Form :

Flat

JESD-609 Code :

e1

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant

Frequency - Transition :

5GHz

Number of Terminations :

4

Transistor Type :

NPN

Mount :

Surface Mount

Number of Elements :

1

Transistor Element Material :

SILICON

Terminal Position :

Radial

Gain :

13dB ~ 15.5dB