MRF517

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Configuration :

Single

Factory Lead Time :

13 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 60mA 10V

Pin Count :

3

Power - Max :

2.5W

Terminal Position :

BOTTOM

Package / Case :

TO-205AD, TO-39-3 Metal Can

Frequency - Transition :

4GHz

Transition Frequency :

4000MHz

Number of Terminations :

3

HTS Code :

8541.29.00.75

Packaging :

Bulk

Radiation Hardening :

No

Published :

2004

RoHS Status :

RoHS Compliant

Collector Emitter Voltage (VCEO) :

20V

Terminal Form :

Wire

Collector Emitter Breakdown Voltage :

20V

Max Power Dissipation :

2.5W

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Collector-Base Capacitance-Max :

4.5pF

Gain :

9dB ~ 10dB

Mounting Type :

Through Hole

Number of Pins :

3

Polarity/Channel Type :

NPN

Max Collector Current :

150mA

Mount :

Through Hole

Transistor Element Material :

SILICON

Pbfree Code :

No

Terminal Finish :

TIN LEAD

Number of Elements :

1

Transistor Type :

NPN

Transistor Application :

AMPLIFIER

JESD-609 Code :

e0

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Collector Base Voltage (VCBO) :

35V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)