MRF555T

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 100mA 5V

Terminal Finish :

TIN LEAD

Gain :

11dB ~ 12.5dB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

Power Macro

JESD-609 Code :

e0

Transistor Type :

NPN

Base Part Number :

MRF555

Mounting Type :

Surface Mount

Radiation Hardening :

No

Polarity/Channel Type :

NPN

Case Connection :

COLLECTOR

RoHS Status :

RoHS Compliant

Power - Max :

3W

Number of Terminations :

4

Max Breakdown Voltage :

16V

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

ECCN Code :

EAR99

Collector-Base Capacitance-Max :

5.5pF

Configuration :

Single

Number of Elements :

1

Lifecycle Status :

Obsolete (Last Updated: 1 month ago)

Collector Emitter Breakdown Voltage :

16V

Mount :

Surface Mount

Number of Pins :

4

Packaging :

Cut Tape (CT)

Max Power Dissipation :

3W

Terminal Form :

Flat

Max Collector Current :

500mA

Terminal Position :

Radial

Published :

2000

Transistor Element Material :

SILICON