MRF5812R1

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Noise Figure (dB Typ @ f) :

2dB ~ 3dB @ 500MHz

Gain :

13dB ~ 15.5dB

ECCN Code :

EAR99

Terminal Finish :

TIN LEAD

Transistor Element Material :

SILICON

Collector-Base Capacitance-Max :

2pF

Number of Elements :

1

Frequency - Transition :

5GHz

JESD-609 Code :

e0

Terminal Form :

Gull wing

Mount :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Power - Max :

1.25W

Max Collector Current :

200mA

Collector Emitter Breakdown Voltage :

15V

Number of Terminations :

8

Number of Pins :

8

Collector Base Voltage (VCBO) :

30V

Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 50mA 5V

Transistor Type :

NPN

Lifecycle Status :

Obsolete (Last Updated: 1 month ago)

Radiation Hardening :

No

Max Power Dissipation :

1.25W

Polarity/Channel Type :

NPN

Pin Count :

8

Operating Temperature (Max) :

150°C

Collector Emitter Voltage (VCEO) :

15V

Terminal Position :

Dual

RoHS Status :

RoHS Compliant

Transistor Application :

AMPLIFIER

Packaging :

Tape and Reel (TR)

Published :

2004

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

5000MHz

Mounting Type :

Surface Mount