MRF5812GR2

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Polarity/Channel Type :

NPN

Frequency - Transition :

5GHz

Gain :

13dB ~ 15.5dB

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Transition Frequency :

5000MHz

Transistor Type :

NPN

Base Part Number :

MRF5812

Voltage - Collector Emitter Breakdown (Max) :

15V

Published :

2004

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Additional Feature :

LOW NOISE

Mounting Type :

Surface Mount

Transistor Application :

AMPLIFIER

Terminal Form :

Gull wing

Terminal Finish :

MATTE TIN

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 50mA 5V

Collector-Base Capacitance-Max :

2pF

JESD-30 Code :

R-PDSO-G8

Power - Max :

1.25W

Number of Terminations :

8

Pin Count :

8

Noise Figure (dB Typ @ f) :

2dB ~ 3dB @ 500MHz

RoHS Status :

RoHS Compliant

Pbfree Code :

yes

Power Dissipation-Max (Abs) :

1.25W

Configuration :

Single

Current - Collector (Ic) (Max) :

200mA

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260