MRF5812GR1

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

RoHS Status :

RoHS Compliant

Gain :

13dB ~ 15.5dB

Transistor Application :

AMPLIFIER

Lifecycle Status :

Obsolete (Last Updated: 2 weeks ago)

Noise Figure (dB Typ @ f) :

2dB ~ 3dB @ 500MHz

JESD-609 Code :

e3

Max Power Dissipation :

1.25W

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

15V

Collector Emitter Voltage (VCEO) :

15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

MATTE TIN

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Elements :

1

Configuration :

Single

Pbfree Code :

yes

Published :

2002

Radiation Hardening :

No

Terminal Form :

Gull wing

Max Collector Current :

200mA

Transition Frequency :

5000MHz

Terminal Position :

Dual

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Transistor Element Material :

SILICON

Power - Max :

1.25W

Frequency - Transition :

5GHz

Transistor Type :

NPN

Polarity/Channel Type :

NPN

ECCN Code :

EAR99

Max Breakdown Voltage :

15V

Number of Pins :

8

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 50mA 5V

Base Part Number :

MRF5812

Collector Base Voltage (VCBO) :

30V

Pin Count :

8

Collector-Base Capacitance-Max :

2pF

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

8

Mounting Type :

Surface Mount