MMDF2C03HDR2G
- Mfr.Part #
- MMDF2C03HDR2G
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N/P-CH 30V 4.1A/3A 8SOIC
- Stock
- 6,111
- In Stock :
- 6,111
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 week ago)
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 70m Ω @ 3A, 10V
- Number of Elements :
- 2
- Lead Free :
- Lead Free
- Qualification Status :
- Not Qualified
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Input Capacitance (Ciss) (Max) @ Vds :
- 630pF @ 24V
- RoHS Status :
- RoHS Compliant
- Number of Pins :
- 8
- Reach Compliance Code :
- Unknown
- FET Type :
- N and P-Channel
- Power Dissipation :
- 2W
- Gate Charge (Qg) (Max) @ Vgs :
- 16nC @ 10V
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 2W
- Pin Count :
- 8
- JESD-609 Code :
- e3
- Turn-Off Delay Time :
- 81 ns
- Current - Continuous Drain (Id) @ 25°C :
- 4.1A 3A
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- yes
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 2A
- Voltage - Rated DC :
- 30V
- Base Part Number :
- MMDF2C03HD
- Polarity/Channel Type :
- N-CHANNEL AND P-CHANNEL
- FET Feature :
- Logic Level Gate
- Drain-source On Resistance-Max :
- 0.07Ohm
- Terminal Position :
- Dual
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tape and Reel (TR)
- Threshold Voltage :
- 1.7V
- Transistor Element Material :
- SILICON
- Published :
- 2006
- Continuous Drain Current (ID) :
- 4.1A
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Fall Time (Typ) :
- 194 ns
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Breakdown Voltage :
- 30V
- Number of Terminations :
- 8
- Rise Time :
- 18ns
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- MMDF2C03HDR2G
MMDF2C03HDR2G Documents

MMDF2C03HDR2G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
MMDF2C03HDR2G Description
These tiny surface-mount MOSFETs have full logic-level performance and an extremely low RDS(on). The drain-to-source diode has a very fast reverse recovery time, and they can sustain tremendous energy in the avalanche and commutation modes. Power efficiency is a key consideration when using these devices in low voltage, high speed switching applications. Dc-dc converters and power management are typical uses in portable and battery-powered items including computers, printers, cellular and cordless phones. Additionally, they can be utilized to control low voltage motors in mass storage items like disk drives and tape drives. In designs where inductive loads are switched, the avalanche energy is defined to remove any uncertainty and provide additional protection against unforeseen voltage transients.
MMDF2C03HDR2G Features
? Longer Battery Life and Higher Efficiency with Ultra Low RDS(on)
? Logic ICs Can Drive the Logic Level Gate Drive
? Saves Board Space with Miniature SO-8 Surface Mount Package
? Bridge Circuit Use of Diodes Is Typical
? Diode Demonstrates Fast, Soft Recovery
? At Elevated Temperature, IDSS is Specified
? Specified Avalanche Energy
? Provided Mounting Instructions for SO-8 Package
? This device is lead-free.
MMDF2C03HDR2G Applications
Switching applications
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