MMDF2C03HDR2G
- Mfr.Part #
- MMDF2C03HDR2G
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N/P-CH 30V 4.1A/3A 8SOIC
- Stock
- 6,111
- In Stock :
- 6,111
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Published :
- 2006
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Mount :
- Surface Mount
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Threshold Voltage :
- 1.7V
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- N-CHANNEL AND P-CHANNEL
- Input Capacitance (Ciss) (Max) @ Vds :
- 630pF @ 24V
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 70m Ω @ 3A, 10V
- Pin Count :
- 8
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- RoHS Compliant
- Pbfree Code :
- yes
- Rise Time :
- 18ns
- Reach Compliance Code :
- Unknown
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 8
- Turn-Off Delay Time :
- 81 ns
- Max Power Dissipation :
- 2W
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 week ago)
- Continuous Drain Current (ID) :
- 4.1A
- Number of Terminations :
- 8
- Drain to Source Breakdown Voltage :
- 30V
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 4.1A 3A
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 40
- FET Feature :
- Logic Level Gate
- FET Type :
- N and P-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Power Dissipation :
- 2W
- Qualification Status :
- Not Qualified
- Operating Mode :
- ENHANCEMENT MODE
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- 30V
- Mounting Type :
- Surface Mount
- Drain-source On Resistance-Max :
- 0.07Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 16nC @ 10V
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 194 ns
- Current Rating :
- 2A
- Transistor Application :
- SWITCHING
- Number of Elements :
- 2
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Base Part Number :
- MMDF2C03HD
- Datasheets
- MMDF2C03HDR2G
MMDF2C03HDR2G Documents

MMDF2C03HDR2G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
MMDF2C03HDR2G Description
These tiny surface-mount MOSFETs have full logic-level performance and an extremely low RDS(on). The drain-to-source diode has a very fast reverse recovery time, and they can sustain tremendous energy in the avalanche and commutation modes. Power efficiency is a key consideration when using these devices in low voltage, high speed switching applications. Dc-dc converters and power management are typical uses in portable and battery-powered items including computers, printers, cellular and cordless phones. Additionally, they can be utilized to control low voltage motors in mass storage items like disk drives and tape drives. In designs where inductive loads are switched, the avalanche energy is defined to remove any uncertainty and provide additional protection against unforeseen voltage transients.
MMDF2C03HDR2G Features
? Longer Battery Life and Higher Efficiency with Ultra Low RDS(on)
? Logic ICs Can Drive the Logic Level Gate Drive
? Saves Board Space with Miniature SO-8 Surface Mount Package
? Bridge Circuit Use of Diodes Is Typical
? Diode Demonstrates Fast, Soft Recovery
? At Elevated Temperature, IDSS is Specified
? Specified Avalanche Energy
? Provided Mounting Instructions for SO-8 Package
? This device is lead-free.
MMDF2C03HDR2G Applications
Switching applications
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