MMDF2C03HDR2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

3V @ 250µA

Packaging :

Tape and Reel (TR)

Current Rating :

2A

FET Type :

N and P-Channel

Drain-source On Resistance-Max :

0.07Ohm

Terminal Form :

Gull wing

Max Power Dissipation :

2W

Threshold Voltage :

1.7V

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Lifecycle Status :

OBSOLETE (Last Updated: 1 week ago)

Mount :

Surface Mount

Pin Count :

8

Power Dissipation :

2W

Time@Peak Reflow Temperature-Max (s) :

40

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Published :

2006

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Reach Compliance Code :

Unknown

Voltage - Rated DC :

30V

Turn-Off Delay Time :

81 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Pins :

8

Number of Terminations :

8

ECCN Code :

EAR99

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

30V

Base Part Number :

MMDF2C03HD

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

630pF @ 24V

FET Feature :

Logic Level Gate

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Lead Free :

Lead Free

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

70m Ω @ 3A, 10V

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Fall Time (Typ) :

194 ns

Terminal Finish :

Tin (Sn)

Rise Time :

18ns

Current - Continuous Drain (Id) @ 25°C :

4.1A 3A

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

4.1A