MMDF2N02ER2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power Dissipation :

2W

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Voltage - Rated DC :

25V

Published :

2006

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Fall Time (Typ) :

18 ns

Input Capacitance (Ciss) (Max) @ Vds :

532pF @ 16V

Lifecycle Status :

OBSOLETE (Last Updated: 1 week ago)

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Rise Time :

17ns

JESD-609 Code :

e3

FET Feature :

Logic Level Gate

Time@Peak Reflow Temperature-Max (s) :

40

Mount :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation :

2W

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Current Rating :

2A

Rds On (Max) @ Id, Vgs :

100m Ω @ 2.2A, 10V

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Elements :

2

Drain to Source Breakdown Voltage :

25V

Gate to Source Voltage (Vgs) :

20V

FET Type :

2 N-Channel (Dual)

Avalanche Energy Rating (Eas) :

245 mJ

Number of Pins :

8

Continuous Drain Current (ID) :

3.6A

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Number of Terminations :

8

Pin Count :

8

Additional Feature :

LOGIC LEVEL COMPATIBLE

Turn-Off Delay Time :

27 ns

RoHS Status :

RoHS Compliant

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

Unknown

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.1Ohm