MMDF2N02ER2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tape and Reel (TR)

FET Feature :

Logic Level Gate

Gate to Source Voltage (Vgs) :

20V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Number of Elements :

2

Rise Time :

17ns

Pin Count :

8

Voltage - Rated DC :

25V

Fall Time (Typ) :

18 ns

Power Dissipation :

2W

Lead Free :

Lead Free

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

LOGIC LEVEL COMPATIBLE

Current Rating :

2A

Turn-Off Delay Time :

27 ns

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Reach Compliance Code :

Unknown

Rds On (Max) @ Id, Vgs :

100m Ω @ 2.2A, 10V

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

3.6A

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Pins :

8

FET Type :

2 N-Channel (Dual)

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

532pF @ 16V

Drain to Source Breakdown Voltage :

25V

Number of Terminations :

8

RoHS Status :

RoHS Compliant

Max Power Dissipation :

2W

Published :

2006

Lifecycle Status :

OBSOLETE (Last Updated: 1 week ago)

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.1Ohm

Avalanche Energy Rating (Eas) :

245 mJ

Transistor Element Material :

SILICON

ECCN Code :

EAR99