MMDF2N02ER2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-609 Code :

e3

Lifecycle Status :

OBSOLETE (Last Updated: 1 week ago)

Terminal Finish :

Tin (Sn)

FET Type :

2 N-Channel (Dual)

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

245 mJ

Published :

2006

Drain-source On Resistance-Max :

0.1Ohm

Number of Terminations :

8

FET Feature :

Logic Level Gate

Turn-Off Delay Time :

27 ns

Pbfree Code :

yes

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

100m Ω @ 2.2A, 10V

Reach Compliance Code :

Unknown

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Transistor Element Material :

SILICON

Max Power Dissipation :

2W

RoHS Status :

RoHS Compliant

Current Rating :

2A

Voltage - Rated DC :

25V

Input Capacitance (Ciss) (Max) @ Vds :

532pF @ 16V

Drain to Source Breakdown Voltage :

25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

2W

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Pins :

8

Rise Time :

17ns

Additional Feature :

LOGIC LEVEL COMPATIBLE

Pin Count :

8

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

3.6A

Time@Peak Reflow Temperature-Max (s) :

40

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Terminal Form :

Gull wing

Fall Time (Typ) :

18 ns