MMDF3N02HDR2

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Mfr.Part #
MMDF3N02HDR2
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 20V 3.8A 8SOIC
Stock
47,370
In Stock :
47,370

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Surface Mount :
yes
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Terminal Form :
Gull wing
Packaging :
Tape and Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds :
630pF @ 16V
Pin Count :
8
Pulsed Drain Current-Max (IDM) :
19A
Terminal Finish :
TIN LEAD
Mounting Type :
Surface Mount
Power Dissipation-Max :
2W Ta
Configuration :
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Rds On (Max) @ Id, Vgs :
90m Ω @ 3A, 10V
Additional Feature :
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
RoHS Status :
Non-RoHS Compliant
Current - Continuous Drain (Id) @ 25°C :
3.8A Ta
Transistor Element Material :
SILICON
Vgs(th) (Max) @ Id :
2V @ 250μA
Gate Charge (Qg) (Max) @ Vgs :
18nC @ 10V
Time@Peak Reflow Temperature-Max (s) :
30
Operating Mode :
ENHANCEMENT MODE
JESD-609 Code :
e0
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
N-Channel
Pbfree Code :
No
Vgs (Max) :
±20V
JESD-30 Code :
R-PDSO-G8
Number of Elements :
2
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Drain-source On Resistance-Max :
0.09Ohm
Peak Reflow Temperature (Cel) :
240
Avalanche Energy Rating (Eas) :
405 mJ
Number of Terminations :
8
Drain to Source Voltage (Vdss) :
20V
Qualification Status :
COMMERCIAL
Terminal Position :
Dual
Drain Current-Max (Abs) (ID) :
3.8A
DS Breakdown Voltage-Min :
20V
Transistor Application :
SWITCHING
Introducing Transistors - FETs, MOSFETs - Single onsemi MMDF3N02HDR2 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:8-SOIC (0.154, 3.90mm Width), Number of Terminations:8, MMDF3N02HDR2 pinout, MMDF3N02HDR2 datasheet PDF, MMDF3N02HDR2 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi MMDF3N02HDR2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MMDF3N02HDR2


N-Channel Tape & Reel (TR) 90m Ω @ 3A, 10V ±20V 630pF @ 16V 18nC @ 10V 20V 8-SOIC (0.154, 3.90mm Width)

MMDF3N02HDR2 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 405 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 630pF @ 16V.There is no drain current on this device since the maximum continuous current it can conduct is 3.8A.There is a peak drain current of 19A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 20V, it should remain above the 20V level.The transistor must receive a 20V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

MMDF3N02HDR2 Features


the avalanche energy rating (Eas) is 405 mJ
based on its rated peak drain current 19A.
a 20V drain to source voltage (Vdss)


MMDF3N02HDR2 Applications


There are a lot of Rochester Electronics, LLC
MMDF3N02HDR2 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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