MMDF3N02HDR2

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

Non-RoHS Compliant

Transistor Application :

SWITCHING

JESD-609 Code :

e0

Current - Continuous Drain (Id) @ 25°C :

3.8A Ta

Drain Current-Max (Abs) (ID) :

3.8A

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

TIN LEAD

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Avalanche Energy Rating (Eas) :

405 mJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

2W Ta

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

630pF @ 16V

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Pbfree Code :

No

Number of Elements :

2

Drain-source On Resistance-Max :

0.09Ohm

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

8

Terminal Position :

Dual

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Vgs(th) (Max) @ Id :

2V @ 250μA

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

19A

Pin Count :

8

Rds On (Max) @ Id, Vgs :

90m Ω @ 3A, 10V

DS Breakdown Voltage-Min :

20V

Peak Reflow Temperature (Cel) :

240

JESD-30 Code :

R-PDSO-G8

Surface Mount :

yes

Qualification Status :

COMMERCIAL

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

20V