MMDF3N02HDR2

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Pbfree Code :

No

JESD-609 Code :

e0

Qualification Status :

COMMERCIAL

RoHS Status :

Non-RoHS Compliant

Rds On (Max) @ Id, Vgs :

90m Ω @ 3A, 10V

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

20V

Transistor Application :

SWITCHING

JESD-30 Code :

R-PDSO-G8

Vgs(th) (Max) @ Id :

2V @ 250μA

Drain-source On Resistance-Max :

0.09Ohm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

3.8A Ta

Terminal Finish :

TIN LEAD

Power Dissipation-Max :

2W Ta

Pulsed Drain Current-Max (IDM) :

19A

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

240

Drain Current-Max (Abs) (ID) :

3.8A

Avalanche Energy Rating (Eas) :

405 mJ

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Voltage (Vdss) :

20V

Pin Count :

8

Terminal Form :

Gull wing

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Terminations :

8

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

630pF @ 16V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Surface Mount :

yes