MMDF2N02ER2

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Breakdown Voltage :

25V

Voltage - Rated DC :

25V

Lead Free :

Contains Lead

Turn-Off Delay Time :

27 ns

Pin Count :

8

Input Capacitance (Ciss) (Max) @ Vds :

532pF @ 16V

Transistor Application :

SWITCHING

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

RoHS Status :

Non-RoHS Compliant

Gate to Source Voltage (Vgs) :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Fall Time (Typ) :

18 ns

Time@Peak Reflow Temperature-Max (s) :

30

Drain-source On Resistance-Max :

0.1Ohm

Number of Terminations :

8

Transistor Element Material :

SILICON

Power Dissipation :

2W

Qualification Status :

Not Qualified

FET Feature :

Logic Level Gate

Rise Time :

17ns

Number of Elements :

2

Avalanche Energy Rating (Eas) :

245 mJ

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Pbfree Code :

No

Number of Pins :

8

Max Power Dissipation :

2W

FET Type :

2 N-Channel (Dual)

Packaging :

Tape and Reel (TR)

Current Rating :

2A

Rds On (Max) @ Id, Vgs :

100m Ω @ 2.2A, 10V

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

3V @ 250µA

Peak Reflow Temperature (Cel) :

240

ECCN Code :

EAR99

Published :

2006

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e0

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

3.6A

Additional Feature :

LOGIC LEVEL COMPATIBLE

Reach Compliance Code :

not_compliant

Lifecycle Status :

Obsolete (Last Updated: 2 weeks ago)