MMDF2C03HDR2

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-609 Code :

e0

Rds On (Max) @ Id, Vgs :

70m Ω @ 3A, 10V

Time@Peak Reflow Temperature-Max (s) :

30

Lead Free :

Contains Lead

Power Dissipation :

2W

Published :

2006

Drain to Source Breakdown Voltage :

30V

Current - Continuous Drain (Id) @ 25°C :

4.1A 3A

Mounting Type :

Surface Mount

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Rise Time :

18ns

Voltage - Rated DC :

30V

Continuous Drain Current (ID) :

3A

Number of Terminations :

8

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

630pF @ 24V

Max Power Dissipation :

2W

Transistor Application :

SWITCHING

FET Type :

N and P-Channel

Current Rating :

4.1A

Number of Elements :

2

Pulsed Drain Current-Max (IDM) :

21A

FET Feature :

Logic Level Gate

Mount :

Surface Mount

Reach Compliance Code :

not_compliant

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

RoHS Status :

Non-RoHS Compliant

Vgs(th) (Max) @ Id :

3V @ 250µA

Pin Count :

8

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Base Part Number :

MMDF2C03HD

Peak Reflow Temperature (Cel) :

240

Terminal Form :

Gull wing

Fall Time (Typ) :

194 ns

Number of Pins :

8

Turn-Off Delay Time :

81 ns

Drain-source On Resistance-Max :

0.07Ohm

Gate to Source Voltage (Vgs) :

20V

Avalanche Energy Rating (Eas) :

324 mJ

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin/Lead (Sn/Pb)

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V