MMDF2C03HDR2

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Pins :

8

Transistor Application :

SWITCHING

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Type :

N and P-Channel

Gate to Source Voltage (Vgs) :

20V

Max Power Dissipation :

2W

RoHS Status :

Non-RoHS Compliant

Rds On (Max) @ Id, Vgs :

70m Ω @ 3A, 10V

Turn-Off Delay Time :

81 ns

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

3A

Published :

2006

Voltage - Rated DC :

30V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Terminal Position :

Dual

Number of Terminations :

8

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Contains Lead

Pulsed Drain Current-Max (IDM) :

21A

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

630pF @ 24V

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

3V @ 250µA

Avalanche Energy Rating (Eas) :

324 mJ

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

30

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

30V

Number of Elements :

2

Pin Count :

8

Reach Compliance Code :

not_compliant

Packaging :

Tape and Reel (TR)

Rise Time :

18ns

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

4.1A

Current - Continuous Drain (Id) @ 25°C :

4.1A 3A

Drain-source On Resistance-Max :

0.07Ohm

JESD-609 Code :

e0

Operating Mode :

ENHANCEMENT MODE

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Terminal Finish :

Tin/Lead (Sn/Pb)

Peak Reflow Temperature (Cel) :

240

Power Dissipation :

2W

Fall Time (Typ) :

194 ns

Base Part Number :

MMDF2C03HD

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

FET Feature :

Logic Level Gate