MJE271G
- Mfr.Part #
- MJE271G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 2A TO126
- Stock
- 12,403
- In Stock :
- 12,403
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -65°C~150°C TJ
- Transistor Type :
- PNP - Darlington
- RoHS Status :
- ROHS3 Compliant
- Frequency - Transition :
- 6MHz
- Mounting Type :
- Through Hole
- Supplier Device Package :
- TO-225AA
- Package / Case :
- TO-225AA, TO-126-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Bulk
- Power - Max :
- 1.5W
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- Current - Collector Cutoff (Max) :
- 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1500 @ 120mA 10V
- Current - Collector (Ic) (Max) :
- 2A
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 1.2mA, 120mA
- Datasheets
- MJE271G
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PNP - Darlington -65°C~150°C TJ 1mA TO-225AA, TO-126-3 Bulk Through Hole
MJE271G Overview
This device has a DC current gain of 1500 @ 120mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 3V @ 1.2mA, 120mA means Ic has reached its maximum value(saturated).Product package TO-225AA comes from the supplier.Collector Emitter Breakdown occurs at 100VV - Maximum voltage.
MJE271G Features
the DC current gain for this device is 1500 @ 120mA 10V
the vce saturation(Max) is 3V @ 1.2mA, 120mA
the supplier device package of TO-225AA
MJE271G Applications
There are a lot of Rochester Electronics, LLC
MJE271G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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