MJE271

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

RoHS Status :

Non-RoHS Compliant

Vce Saturation (Max) @ Ib, Ic :

3V @ 1.2mA, 120mA

Lead Free :

Contains Lead

Packaging :

Bulk

Time@Peak Reflow Temperature-Max (s) :

30

Voltage - Rated DC :

-100V

Collector Emitter Breakdown Voltage :

100V

Element Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

1500 @ 120mA 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

1.5W

Operating Temperature :

-65°C~150°C TJ

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

1mA

Transition Frequency :

6MHz

Surface Mount :

No

Package / Case :

TO-225AA, TO-126-3

HTS Code :

8541.29.00.95

Number of Pins :

3

Peak Reflow Temperature (Cel) :

240

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Voltage (VCEO) :

3V

Collector Emitter Saturation Voltage :

2V

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

JESD-609 Code :

e0

Transistor Type :

PNP - Darlington

Current - Collector (Ic) (Max) :

2A

Max Collector Current :

2A

Mounting Type :

Through Hole

Current Rating :

-2A

Number of Elements :

1

Pin Count :

3

Number of Terminations :

3

Collector Base Voltage (VCBO) :

100V

Published :

2008

Gain Bandwidth Product :

6MHz

Reach Compliance Code :

not_compliant

Terminal Finish :

Tin/Lead (Sn/Pb)

hFE Min :

500

Polarity :

PNP