MJE271

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Mfr.Part #
MJE271
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP DARL 100V 2A TO126
Stock
30,949
In Stock :
30,949

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Voltage - Rated DC :
-100V
Collector Base Voltage (VCBO) :
100V
Collector Emitter Saturation Voltage :
2V
ECCN Code :
EAR99
Transition Frequency :
6MHz
Gain Bandwidth Product :
6MHz
Number of Terminations :
3
Collector Emitter Breakdown Voltage :
100V
Qualification Status :
Not Qualified
HTS Code :
8541.29.00.95
RoHS Status :
Non-RoHS Compliant
Transistor Element Material :
SILICON
Pin Count :
3
Operating Temperature :
-65°C~150°C TJ
Lead Free :
Contains Lead
DC Current Gain (hFE) (Min) @ Ic, Vce :
1500 @ 120mA 10V
Reach Compliance Code :
not_compliant
Current Rating :
-2A
Element Configuration :
Single
Vce Saturation (Max) @ Ib, Ic :
3V @ 1.2mA, 120mA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Collector Current :
2A
hFE Min :
500
Current - Collector Cutoff (Max) :
1mA
Peak Reflow Temperature (Cel) :
240
Current - Collector (Ic) (Max) :
2A
Number of Elements :
1
Packaging :
Bulk
Number of Pins :
3
Polarity :
PNP
Mounting Type :
Through Hole
Terminal Finish :
Tin/Lead (Sn/Pb)
Package / Case :
TO-225AA, TO-126-3
Published :
2008
Time@Peak Reflow Temperature-Max (s) :
30
Transistor Type :
PNP - Darlington
Max Power Dissipation :
1.5W
Collector Emitter Voltage (VCEO) :
3V
JESD-609 Code :
e0
Surface Mount :
No
Emitter Base Voltage (VEBO) :
5V
Datasheets
MJE271
Introducing Transistors - Bipolar (BJT) - Single onsemi MJE271 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-65°C~150°C TJ, Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-225AA, TO-126-3, MJE271 pinout, MJE271 datasheet PDF, MJE271 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJE271 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJE271


PNP - Darlington -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole

MJE271 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1500 @ 120mA 10V.The collector emitter saturation voltage is 2V, which allows for maximum design flexibility.When VCE saturation is 3V @ 1.2mA, 120mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -2A.In the part, the transition frequency is 6MHz.A maximum collector current of 2A volts can be achieved.

MJE271 Features


the DC current gain for this device is 1500 @ 120mA 10V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 1.2mA, 120mA
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 6MHz


MJE271 Applications


There are a lot of ON Semiconductor
MJE271 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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