MJE271
- Mfr.Part #
- MJE271
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 2A TO126
- Stock
- 30,949
- In Stock :
- 30,949
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- -100V
- Collector Base Voltage (VCBO) :
- 100V
- Collector Emitter Saturation Voltage :
- 2V
- ECCN Code :
- EAR99
- Transition Frequency :
- 6MHz
- Gain Bandwidth Product :
- 6MHz
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 100V
- Qualification Status :
- Not Qualified
- HTS Code :
- 8541.29.00.95
- RoHS Status :
- Non-RoHS Compliant
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Operating Temperature :
- -65°C~150°C TJ
- Lead Free :
- Contains Lead
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1500 @ 120mA 10V
- Reach Compliance Code :
- not_compliant
- Current Rating :
- -2A
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 1.2mA, 120mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 2A
- hFE Min :
- 500
- Current - Collector Cutoff (Max) :
- 1mA
- Peak Reflow Temperature (Cel) :
- 240
- Current - Collector (Ic) (Max) :
- 2A
- Number of Elements :
- 1
- Packaging :
- Bulk
- Number of Pins :
- 3
- Polarity :
- PNP
- Mounting Type :
- Through Hole
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Package / Case :
- TO-225AA, TO-126-3
- Published :
- 2008
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Type :
- PNP - Darlington
- Max Power Dissipation :
- 1.5W
- Collector Emitter Voltage (VCEO) :
- 3V
- JESD-609 Code :
- e0
- Surface Mount :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- MJE271
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PNP - Darlington -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
MJE271 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1500 @ 120mA 10V.The collector emitter saturation voltage is 2V, which allows for maximum design flexibility.When VCE saturation is 3V @ 1.2mA, 120mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -2A.In the part, the transition frequency is 6MHz.A maximum collector current of 2A volts can be achieved.
MJE271 Features
the DC current gain for this device is 1500 @ 120mA 10V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 1.2mA, 120mA
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 6MHz
MJE271 Applications
There are a lot of ON Semiconductor
MJE271 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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