MJE270G
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- Mfr.Part #
- MJE270G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 2A TO126
- Stock
- 877
- In Stock ：
- 877
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2006
- Height :
- 6.35mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- yes
- Weight :
- 4.535924g
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Bulk
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Number of Pins :
- 3
- Contact Plating :
- Tin
- REACH SVHC :
- No SVHC
- Current Rating :
- 2A
- Surface Mount :
- No
- Transistor Type :
- NPN - Darlington
- Factory Lead Time :
- 5 Weeks
- Halogen Free :
- Halogen Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -65°C~150°C TJ
- Polarity :
- NPN
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 1mA
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- hFE Min :
- 500
- Width :
- 6.35mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1500 @ 120mA 10V
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 6MHz
- Power Dissipation :
- 1.5W
- Package / Case :
- TO-225AA, TO-126-3
- Length :
- 6.35mm
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 1.2mA, 120mA
- Number of Elements :
- 1
- Voltage - Rated DC :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 6MHz
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 100V
- Transition Frequency :
- 6MHz
- Collector Emitter Voltage (VCEO) :
- 100V
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- 2V
- Collector Base Voltage (VCBO) :
- 100V
- Max Power Dissipation :
- 1.5W
- Max Collector Current :
- 2A
- Datasheets
- MJE270G
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NPN - Darlington -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
MJE270G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1500 @ 120mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 1.2mA, 120mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 6MHz.During maximum operation, collector current can be as low as 2A volts.
MJE270G Features
the DC current gain for this device is 1500 @ 120mA 10V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 1.2mA, 120mA
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 6MHz
MJE270G Applications
There are a lot of ON Semiconductor
MJE270G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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