MJE270G
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- Mfr.Part #
- MJE270G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 2A TO126
- Stock
- 877
- In Stock ：
- 877
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 1.2mA, 120mA
- Number of Pins :
- 3
- Pin Count :
- 3
- Number of Elements :
- 1
- Max Collector Current :
- 2A
- Gain Bandwidth Product :
- 6MHz
- Radiation Hardening :
- No
- Max Power Dissipation :
- 1.5W
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 100V
- Collector Emitter Saturation Voltage :
- 2V
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1500 @ 120mA 10V
- Length :
- 6.35mm
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 1mA
- Transistor Type :
- NPN - Darlington
- Packaging :
- Bulk
- Width :
- 6.35mm
- Voltage - Rated DC :
- 100V
- hFE Min :
- 500
- Power Dissipation :
- 1.5W
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Height :
- 6.35mm
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-225AA, TO-126-3
- Collector Emitter Breakdown Voltage :
- 100V
- Collector Emitter Voltage (VCEO) :
- 100V
- JESD-609 Code :
- e3
- Published :
- 2006
- Transition Frequency :
- 6MHz
- Surface Mount :
- No
- Polarity :
- NPN
- Weight :
- 4.535924g
- Current Rating :
- 2A
- Frequency :
- 6MHz
- Operating Temperature :
- -65°C~150°C TJ
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Halogen Free :
- Halogen Free
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 5 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Datasheets
- MJE270G
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NPN - Darlington -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
MJE270G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1500 @ 120mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 1.2mA, 120mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 6MHz.During maximum operation, collector current can be as low as 2A volts.
MJE270G Features
the DC current gain for this device is 1500 @ 120mA 10V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 1.2mA, 120mA
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 6MHz
MJE270G Applications
There are a lot of ON Semiconductor
MJE270G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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