MJD47T4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Collector Current :

1A

Transistor Application :

SWITCHING

Gain Bandwidth Product :

10MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 300mA 10V

Transistor Element Material :

SILICON

Frequency :

10MHz

Current Rating :

1A

ECCN Code :

EAR99

Transition Frequency :

10MHz

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Voltage (VCEO) :

250V

Transistor Type :

NPN

Case Connection :

COLLECTOR

Weight :

4.535924g

Published :

2005

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Mounting Type :

Surface Mount

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Height :

2.38mm

Factory Lead Time :

8 Weeks

Voltage - Rated DC :

250V

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Packaging :

Cut Tape (CT)

Lead Free :

Lead Free

Surface Mount :

yes

Length :

6.73mm

Power Dissipation :

1.56W

JESD-30 Code :

R-PSSO-G2

Current - Collector Cutoff (Max) :

200μA

Lifecycle Status :

ACTIVE (Last Updated: 17 hours ago)

Operating Temperature :

-65°C~150°C TJ

Width :

6.22mm

Polarity/Channel Type :

NPN

Pin Count :

3

Collector Emitter Saturation Voltage :

1V

Number of Pins :

3

Collector Emitter Breakdown Voltage :

250V

Collector Base Voltage (VCBO) :

350V

Pbfree Code :

yes

Vce Saturation (Max) @ Ib, Ic :

1V @ 200mA, 1A

Max Breakdown Voltage :

250V

REACH SVHC :

No SVHC

Max Power Dissipation :

1.56W

Base Part Number :

MJD47

Number of Elements :

1

Terminal Form :

Gull wing

hFE Min :

30

Contact Plating :

Tin

Emitter Base Voltage (VEBO) :

5V