MJD42C1G

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Mfr.Part #
MJD42C1G
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
TRANS PNP 100V 6A IPAK
Stock
4,478
In Stock :
4,478

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
REACH SVHC :
No SVHC
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Voltage - Rated DC :
-100V
Collector Emitter Voltage (VCEO) :
100V
Terminal Finish :
Tin (Sn)
Surface Mount :
No
Number of Terminations :
3
Frequency :
3MHz
Element Configuration :
Single
JESD-30 Code :
R-PSIP-T3
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Polarity/Channel Type :
PNP
Collector Emitter Breakdown Voltage :
100V
Pin Count :
4
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Base Part Number :
MJD42
Current Rating :
-6A
Pbfree Code :
yes
Transistor Type :
PNP
Packaging :
Tube
Transistor Application :
SWITCHING
Time@Peak Reflow Temperature-Max (s) :
40
Power Dissipation :
1.75W
Transition Frequency :
3MHz
Max Breakdown Voltage :
100V
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 600mA, 6A
Max Collector Current :
6A
JESD-609 Code :
e3
DC Current Gain (hFE) (Min) @ Ic, Vce :
15 @ 3A 4V
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
260
Gain Bandwidth Product :
3MHz
Radiation Hardening :
No
Number of Pins :
4
Case Connection :
COLLECTOR
Number of Elements :
1
Published :
2006
Current - Collector Cutoff (Max) :
50μA
Transistor Element Material :
SILICON
Operating Temperature :
-65°C~150°C TJ
Max Power Dissipation :
1.75W
Lead Free :
Lead Free
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
8 Weeks
Emitter Base Voltage (VEBO) :
5V
Collector Base Voltage (VCBO) :
100V
Datasheets
MJD42C1G
Introducing Transistors - Bipolar (BJT) - Single onsemi MJD42C1G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Base Part Number:MJD42, Number of Pins:4, Operating Temperature:-65°C~150°C TJ, MJD42C1G pinout, MJD42C1G datasheet PDF, MJD42C1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJD42C1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJD42C1G


PNP -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON PNP TO-251-3 Short Leads, IPak, TO-251AA Tube Through Hole

MJD42C1G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 15 @ 3A 4V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 3MHz in the part.Single BJT transistor can be broken down at a voltage of 100V volts.When collector current reaches its maximum, it can reach 6A volts.

MJD42C1G Features


the DC current gain for this device is 15 @ 3A 4V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is -6A
a transition frequency of 3MHz


MJD42C1G Applications


There are a lot of ON Semiconductor
MJD42C1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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