MJD41CRLG
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- Mfr.Part #
- MJD41CRLG
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 100V 6A DPAK
- Stock
- 23,089
- In Stock ：
- 23,089
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 30
- Max Breakdown Voltage :
- 100V
- Current Rating :
- 6A
- Lifecycle Status :
- ACTIVE (Last Updated: 18 hours ago)
- Surface Mount :
- yes
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 100V
- Factory Lead Time :
- 8 Weeks
- Gain Bandwidth Product :
- 3MHz
- Max Collector Current :
- 6A
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 100V
- Number of Terminations :
- 2
- Published :
- 2006
- Voltage - Rated DC :
- 100V
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 1.5V
- Packaging :
- Tape and Reel (TR)
- JESD-30 Code :
- R-PSSO-G2
- Current - Collector Cutoff (Max) :
- 50μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Base Part Number :
- MJD41
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 1.75W
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 600mA, 6A
- Case Connection :
- COLLECTOR
- Operating Temperature :
- -65°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 3A 4V
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Power Dissipation :
- 1.75W
- Collector Emitter Breakdown Voltage :
- 100V
- Frequency :
- 3MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 3MHz
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- MJD41CRLG
NPN -65°C~150°C TJ 50μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD41CRLG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 15 @ 3A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 600mA, 6A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 6A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 3MHz.The breakdown input voltage is 100V volts.Single BJT transistor is possible to have a collector current as low as 6A volts at Single BJT transistors maximum.
MJD41CRLG Features
the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is 6A
a transition frequency of 3MHz
MJD41CRLG Applications
There are a lot of ON Semiconductor
MJD41CRLG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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