MJD41CTF
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- Mfr.Part #
- MJD41CTF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 100V 6A TO252AA
- Stock
- 7,642
- In Stock ：
- 7,642
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 100V
- Power Dissipation :
- 1.75W
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Terminal Form :
- Gull wing
- RoHS Status :
- RoHS Compliant
- ECCN Code :
- EAR99
- Transistor Application :
- AMPLIFIER
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- 100V
- Max Collector Current :
- 6A
- Number of Pins :
- 3
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 3MHz
- Current - Collector Cutoff (Max) :
- 10μA
- Base Part Number :
- MJD41
- Width :
- 6.1mm
- Gain Bandwidth Product :
- 3MHz
- Number of Elements :
- 1
- Factory Lead Time :
- 15 Weeks
- Published :
- 2001
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PSSO-G2
- Collector Emitter Breakdown Voltage :
- 100V
- Current Rating :
- 6A
- Weight :
- 260.37mg
- Terminal Finish :
- Tin (Sn)
- Height :
- 2.3mm
- Collector Emitter Voltage (VCEO) :
- 100V
- Collector Emitter Saturation Voltage :
- 1.5V
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 600mA, 6A
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 1.75W
- Max Breakdown Voltage :
- 100V
- hFE Min :
- 15
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Terminations :
- 2
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 3A 4V
- Transition Frequency :
- 3MHz
- Length :
- 6.6mm
- Operating Temperature :
- 150°C TJ
- Datasheets
- MJD41CTF
NPN 150°C TJ 10μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD41CTF Overview
In this device, the DC current gain is 15 @ 3A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 600mA, 6A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 6A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 6A volts at Single BJT transistors maximum.
MJD41CTF Features
the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is 6A
a transition frequency of 3MHz
MJD41CTF Applications
There are a lot of ON Semiconductor
MJD41CTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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