MJD41CRL
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- Mfr.Part #
- MJD41CRL
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS POWER NPN 6A 100V DPAK
- Stock
- 1,032
- In Stock ：
- 1,032
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Factory Lead Time :
- 8 Weeks
- Max Breakdown Voltage :
- 100V
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Saturation Voltage :
- 1.5V
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 100V
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 100V
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- Power Dissipation :
- 1.75W
- Pin Count :
- 3
- Number of Terminations :
- 2
- Current Rating :
- 6A
- Max Collector Current :
- 6A
- Base Part Number :
- MJD41
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 18 hours ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- hFE Min :
- 30
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 3A 4V
- Current - Collector Cutoff (Max) :
- 50μA
- Pbfree Code :
- yes
- Surface Mount :
- yes
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Transition Frequency :
- 3MHz
- Gain Bandwidth Product :
- 3MHz
- Collector Base Voltage (VCBO) :
- 100V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Temperature :
- -65°C~150°C TJ
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- JESD-30 Code :
- R-PSSO-G2
- Number of Pins :
- 3
- Published :
- 2006
- Collector Emitter Breakdown Voltage :
- 100V
- Max Power Dissipation :
- 1.75W
- Frequency :
- 3MHz
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 600mA, 6A
- Datasheets
- MJD41CRL
NPN -65°C~150°C TJ 50μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD41CRLG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 15 @ 3A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 600mA, 6A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 6A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 3MHz.The breakdown input voltage is 100V volts.Single BJT transistor is possible to have a collector current as low as 6A volts at Single BJT transistors maximum.
MJD41CRLG Features
the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is 6A
a transition frequency of 3MHz
MJD41CRLG Applications
There are a lot of ON Semiconductor
MJD41CRLG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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