MJD41CTF
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- Mfr.Part #
- MJD41CTF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 100V 6A TO252
- Stock
- 7,642
- In Stock ：
- 7,642
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- AMPLIFIER
- Pbfree Code :
- yes
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 260.37mg
- RoHS Status :
- RoHS Compliant
- Current Rating :
- 6A
- Base Part Number :
- MJD41
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Frequency :
- 3MHz
- Terminal Form :
- Gull wing
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 3A 4V
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PSSO-G2
- Number of Terminations :
- 2
- Length :
- 6.6mm
- Collector Emitter Voltage (VCEO) :
- 100V
- Voltage - Rated DC :
- 100V
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- hFE Min :
- 15
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 600mA, 6A
- Gain Bandwidth Product :
- 3MHz
- Max Power Dissipation :
- 1.75W
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 100V
- Factory Lead Time :
- 15 Weeks
- Lead Free :
- Lead Free
- Width :
- 6.1mm
- Published :
- 2001
- Current - Collector Cutoff (Max) :
- 10μA
- Transition Frequency :
- 3MHz
- Power Dissipation :
- 1.75W
- Collector Base Voltage (VCBO) :
- 100V
- Max Breakdown Voltage :
- 100V
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Height :
- 2.3mm
- Collector Emitter Saturation Voltage :
- 1.5V
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 6A
- Mount :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Datasheets
- MJD41CTF
NPN 150°C TJ 10μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD41CTF Overview
In this device, the DC current gain is 15 @ 3A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 600mA, 6A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 6A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 6A volts at Single BJT transistors maximum.
MJD41CTF Features
the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is 6A
a transition frequency of 3MHz
MJD41CTF Applications
There are a lot of ON Semiconductor
MJD41CTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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