MJD41CT4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Breakdown Voltage :

100V

Power Dissipation :

1.75W

Number of Pins :

3

Surface Mount :

yes

Case Connection :

COLLECTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

50μA

Max Collector Current :

6A

Width :

6.22mm

Mounting Type :

Surface Mount

Polarity/Channel Type :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 3A 4V

Max Power Dissipation :

1.75W

JESD-609 Code :

e3

Pbfree Code :

yes

Height :

2.38mm

Voltage - Rated DC :

100V

Contact Plating :

Tin

Emitter Base Voltage (VEBO) :

5V

Length :

6.73mm

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

40

REACH SVHC :

No SVHC

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Frequency :

3MHz

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

100V

Max Breakdown Voltage :

100V

Operating Temperature :

-65°C~150°C TJ

Element Configuration :

Single

hFE Min :

30

Transistor Element Material :

SILICON

Factory Lead Time :

19 Weeks

Current Rating :

6A

Transition Frequency :

3MHz

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Transistor Type :

NPN

Peak Reflow Temperature (Cel) :

260

Collector Emitter Saturation Voltage :

1.5V

Radiation Hardening :

No

Base Part Number :

MJD41

Lifecycle Status :

ACTIVE (Last Updated: 8 hours ago)

Terminal Form :

Gull wing

Collector Base Voltage (VCBO) :

100V

Published :

2006

Gain Bandwidth Product :

3MHz

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 600mA, 6A

JESD-30 Code :

R-PSSO-G2

Pin Count :

3