MJD47T4
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- Mfr.Part #
- MJD47T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 250V 1A DPAK
- Stock
- 1,888
- In Stock ：
- 1,888
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 1V
- Current Rating :
- 1A
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 300mA 10V
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- VCEsat-Max :
- 1 V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Radiation Hardening :
- No
- Factory Lead Time :
- 8 Weeks
- Base Part Number :
- MJD47
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- 5V
- Frequency :
- 10MHz
- hFE Min :
- 30
- Current - Collector Cutoff (Max) :
- 100μA
- Number of Terminations :
- 2
- Power Dissipation :
- 15W
- Length :
- 6.6mm
- Number of Elements :
- 1
- Voltage - Rated DC :
- 250V
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- NPN
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 250V
- Weight :
- 4.535924g
- Max Collector Current :
- 1A
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 1A
- Height :
- 2.4mm
- Max Power Dissipation :
- 15W
- Transition Frequency :
- 10MHz
- Case Connection :
- COLLECTOR
- JESD-30 Code :
- R-PSSO-G2
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-252AA
- Terminal Finish :
- Matte Tin (Sn)
- Width :
- 6.2mm
- Gain Bandwidth Product :
- 10MHz
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 350V
- Max Breakdown Voltage :
- 250V
- Collector Emitter Voltage (VCEO) :
- 250V
- Datasheets
- MJD47T4
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NPN 150°C TJ 100μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD47T4 Overview
In this device, the DC current gain is 30 @ 300mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 200mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 10MHz.Input voltage breakdown is available at 250V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
MJD47T4 Features
the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 10MHz
MJD47T4 Applications
There are a lot of STMicroelectronics
MJD47T4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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