MJD47T4

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Transistor Type :

NPN

Max Breakdown Voltage :

250V

Current - Collector Cutoff (Max) :

100μA

Max Collector Current :

1A

JEDEC-95 Code :

TO-252AA

Case Connection :

COLLECTOR

Gain Bandwidth Product :

10MHz

Weight :

4.535924g

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

30

Collector Base Voltage (VCBO) :

350V

Height :

2.4mm

Transition Frequency :

10MHz

Length :

6.6mm

Lead Free :

Lead Free

Voltage - Rated DC :

250V

Radiation Hardening :

No

Element Configuration :

Single

Collector Emitter Saturation Voltage :

1V

Collector Emitter Voltage (VCEO) :

250V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Width :

6.2mm

Mount :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

1V @ 200mA, 1A

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

Base Part Number :

MJD47

Number of Terminations :

2

Transistor Application :

SWITCHING

Number of Pins :

3

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Max Power Dissipation :

15W

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 300mA 10V

Polarity/Channel Type :

NPN

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape and Reel (TR)

Current Rating :

1A

Power Dissipation :

15W

Terminal Form :

Gull wing

Emitter Base Voltage (VEBO) :

5V

Frequency :

10MHz

REACH SVHC :

No SVHC

Collector Emitter Breakdown Voltage :

250V

Factory Lead Time :

8 Weeks

ECCN Code :

EAR99

hFE Min :

30

VCEsat-Max :

1 V